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SIJ484DP-T1-GE3-VB Product details

Product introduction:

SIJ484DP-T1-GE3-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. Trench technology balances low switching losses with high reliability, and the LFPAK56 package achieves a balance between thermal performance and board area. The combination of 30V withstand voltage, 90A current carrying capacity, and 2.8mΩ on-resistance makes it an ideal high power density alternative to traditional DPAK or SOP-8 package devices, especially suitable for high-current, high-reliability applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 30V 0.8V 90A 3.36(mΩ) 2.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=30V: Suitable for 5V/12V/24V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating level-shifting circuits.
Vth=0.8V (Typical): Enters fully enhanced region under low-voltage drive, especially suitable for low-voltage drive and battery voltage decay scenarios.
RDS(on)=3.36mΩ @ VGS=4.5V / 2.8mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load temperature rise, can reduce heat sink copper area, and improve system efficiency.
ID=90A: Ample continuous current margin to handle high-power loads and high peak current demands.
Package LFPAK56: Small size, low parasitic parameters, supports high-frequency switching, while having excellent thermal conduction path, suitable for high-density assembly and efficient heat dissipation.

Domain and module applications:


High-Current DC-DC Converters: Replaces Schottky diodes in synchronous rectification. The ultra-low on-resistance significantly reduces conduction losses, improving heavy-load efficiency by 2~3%, facilitating module miniaturization.
Battery Protection Modules: Fast response ensures microsecond-level turn-off during overcurrent/short circuit. The 2.8mΩ-level internal resistance greatly reduces self-heating of the protection board.
Low-Voltage Motor Drives: Low PWM switching losses result in smoother motor operation and a noticeable decrease in controller temperature rise, suitable for high-power power tools and automotive motors.
Portable Device Power Management: Low internal resistance improves boost/buck efficiency, extending battery life. The LFPAK56 package enables ultra-slim and compact designs.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range adapt to 12V/24V automotive buses, offering high reliability for automotive electronic load switches.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power loss, supports multi-channel paralleling, improving overall light efficacy and reliability.
Communication and Server Power Supplies: High current carrying capacity meets the needs of high power density power supply modules, with low losses improving overall energy efficiency. Selection Summary: The SIJ484DP-T1-GE3-VB achieves a balance between extremely low on-resistance, high current capability, package thermal performance, and system cost. It is a high-performance general-purpose choice for 30V low-voltage, high-current switching applications, particularly suitable for projects with strict requirements on efficiency, thermal dissipation, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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