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SIJ420DP-T1-GE3-VB Product details

Product introduction:

You are designing a high power density DC-DC converter with extremely limited board space, yet it needs to continuously carry tens of amperes of load current. Traditional MOSFETs either have packages that are too large or suffer from troublesome conduction losses. VBsemi SIJ420DP-T1-GE3-VB is designed to solve this exact problem—based on Trench technology, it integrates 30V withstand voltage, 90A ultra-high current capability, and an on-resistance as low as 2.8mΩ into an LFPAK56 (PowerPAK SO-8 compatible) package, providing an extremely efficient power switching solution for server power supplies, power tools, and automotive electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 30V 0.8V 90A 3.36(mΩ) 2.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N

- Voltage 30V, suitable for low-voltage high-current applications
- Gate drive range ±20V, compatible with various logic level drives
- Threshold voltage 0.8V, low-voltage control signal can effectively turn on
- On-resistance 2.8mΩ (10V drive) / 3.36mΩ (4.5V drive), extremely low loss, significantly reduced heat generation
- Maximum current 90A, LFPAK56 package houses powerful current handling capability
- Technology Trench, excellent FOM, combining switching performance and conduction performance

Domain and module applications:


- Synchronous Rectification Buck/Boost Modules – Used as low-side/high-side switching transistors, significantly reducing rectification losses and improving power conversion efficiency.
- Motor Drive Control – Supports 90A transient high current, adapting to load surge scenarios in power tools, drone ESCs, etc., ensuring stability and reliability.
- Battery Protection and Charge/Discharge Management – Milliohm-level on-resistance reduces voltage drop and temperature rise. Combined with fast turn-off characteristics, it effectively protects battery cells and circuits.
- Server/Telecom Power Supplies – High current density design reduces the number of paralleled devices, saves PCB area, and simplifies thermal design.
- Automotive Low-Voltage Circuits (12V/24V Systems) – Withstands automotive-grade voltage fluctuations, providing power switching for vehicle lighting, pump loads, etc.
- Light Electric Vehicle Controllers – Handles high current surges during startup/climbing, improving system durability and range.
- Load Switches / Hot-Swap Protection – Low conduction voltage drop, supports high current path switching, improving system power budget. **One-sentence summary:** The SIJ420DP-T1-GE3-VB is not just an ordinary MOSFET; it is the "low-resistance weapon" and "power heart" for your low-voltage, high-current power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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