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SIJ400DP-T1-GE3-VB Product details
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VBsemi SIJ400DP-T1-GE3-VB is a Single N-channel MOSFET from the VBsemi product series. This product features extremely low on-resistance and high current carrying capacity, suitable for high-performance power conversion and power management applications. It is manufactured using advanced Trench technology, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) rating of ±20V. The product is packaged in LFPAK56, balancing heat dissipation performance with compact design requirements, suitable for high power density application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 30V | 0.8V | 90A | 3.36(mΩ) | 2.8(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 30V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 0.8V
On-Resistance (VGS=4.5V): 3.36mΩ
On-Resistance (VGS=10V): 2.8mΩ
Maximum Drain Current (ID): 90A
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 0.8V
On-Resistance (VGS=4.5V): 3.36mΩ
On-Resistance (VGS=10V): 2.8mΩ
Maximum Drain Current (ID): 90A
Technology: Trench
Domain and module applications：
1. High-Power DC-DC Converters: SIJ400DP-T1-GE3-VB is suitable for synchronous rectification and switching circuits. Its ultra-low on-resistance can significantly improve conversion efficiency and meet high current output requirements.
2. Server and Telecom Power Supply Modules: This device can be used as a power switch in server power supplies, base station power modules, etc., supporting hot-swap and point-of-load power designs, ensuring stable system operation.
3. Power Tools and Motor Drives: In low-voltage motor drive modules, such as power tools and robot motor controllers, this MOSFET can withstand high current surges, enabling efficient and reliable motor start/stop and speed control.
4. Battery Protection and Management Systems: As a charge/discharge control switch, it is suitable for lithium-ion battery pack protection boards and energy storage system battery management units. The low on-resistance helps reduce heat generation and improve safety.
5. Automotive Auxiliary Power Systems: In automotive electronic systems, it can be applied in DC-DC converters, LED lighting drivers, and automotive auxiliary power modules, meeting electrical performance requirements under automotive-grade conditions.
6. High-Performance Load Switches: Suitable for power load on/off control in smart homes, industrial control, etc., such as smart sockets and distribution switches, supporting high current switching and reducing losses.
7. Low-Voltage High-Current Inverter Circuits: Can be used in front-end boost or back-end drive circuits of portable energy storage power supplies, inverters, etc., leveraging its low impedance and high current advantages to improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
