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PSMN3R2-25YLC,115-VB Product details
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VBsemi PSMN3R2-25YLC,115-VB is a Single N-channel field-effect transistor, part of the VBsemi brand high-performance power MOSFET series. This product is manufactured using advanced Trench technology, featuring extremely low on-resistance and excellent current handling capability, suitable for high-power-density, high-efficiency power conversion and control scenarios. The device is packaged in LFPAK56, offering good thermal performance and a compact footprint, meeting the dual requirements of miniaturization and reliability in modern power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 30V | 0.8V | 90A | 3.36(mΩ) | 2.8(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 0.8V
- On-Resistance (VGS=4.5V): 3.36mΩ
- On-Resistance (VGS=10V): 2.8mΩ
- Maximum Drain Current (ID): 90A
- Package Type: LFPAK56
- Technology: Trench
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 0.8V
- On-Resistance (VGS=4.5V): 3.36mΩ
- On-Resistance (VGS=10V): 2.8mΩ
- Maximum Drain Current (ID): 90A
- Package Type: LFPAK56
- Technology: Trench
Domain and module applications：
1. High-Efficiency DC-DC Converters: PSMN3R2-25YLC,115-VB is suitable for synchronous rectification and switching circuits. With an ultra-low on-resistance of 2.8mΩ, it significantly reduces conversion losses and improves power conversion efficiency, making it ideal for high-current-density scenarios such as server power supplies and communication power supplies.
2. Battery Protection and Management Systems: In lithium-ion battery charge/discharge protection modules, this device can serve as a low-loss switching element, supporting current switching up to 90A, ensuring the safety and reliability of battery packs in high-power applications.
3. Low-Voltage High-Current Motor Drives: Suitable for low-voltage motor drive circuits in power tools, drones, robots, etc., for motor start/stop control and speed regulation. The excellent heat dissipation package and low on-resistance help extend device runtime and service life.
4. Load Switches and Power Management: In smart home, industrial control, and other systems, this product can be used for power path management, load switching, and hot-swap protection, achieving low-heat, high-reliability power distribution.
5. Automotive Electronic Auxiliary Systems: In vehicle power distribution units, body control modules, and LED automotive light drive circuits, this MOSFET provides stable switching performance, meeting the requirements of automotive electronics for a wide temperature range and high impact resistance.
6. Power Modules and Redundant Power Supplies: In N+1 redundant power supply architectures and OR-ing circuits, PSMN3R2-25YLC,115-VB can serve as an ideal active rectifier device, reducing power loss with extremely low voltage drop and improving overall system efficiency. With its ultra-low on-resistance, high current capability, and LFPAK56 efficient heat dissipation package, this model becomes a preferred solution for medium and low-voltage high-power applications, effectively helping designers simplify circuits and enhance the competitiveness of end products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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