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HAT2261H-EL-E-VB Product details

Product introduction:

HAT2261H-EL-E-VB is a Single N-MOS deeply optimized for low-voltage high-power switching scenarios. The Trench process balances ultra-low conduction loss with high switching speed, and the LFPAK56 package achieves an excellent trade-off between heat dissipation and parasitic parameters. With 30V withstand voltage, 90A current capacity, and 2.8mΩ on-resistance, it is an ideal core power device for high-density power systems, battery protection, and motor drive applications, especially for projects with stringent efficiency and temperature rise requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 30V 0.8V 90A 3.36(mΩ) 2.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=30V: Suitable for 5V/12V/24V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=0.8V (Typical): Turns on with low-voltage drive, suitable for battery voltage decay and low gate drive scenarios.
RDS(on)=2.8mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load conduction loss, significantly reduces system temperature rise.
RDS(on)=3.36mΩ @ VGS=4.5V: Maintains very low impedance even with low-voltage drive, accommodates direct logic level drive.
ID=90A: Ample continuous current capability, can handle high-power loads and high transient peak demands.
Package LFPAK56: Low parasitic inductance, excellent thermal path, supports high-frequency switching, while saving PCB area and simplifying thermal design.

Domain and module applications:


High-Efficiency DC-DC Converters: Replaces Schottky diodes in synchronous rectification applications, significantly improving heavy-load efficiency, suitable for module power supply miniaturization.
Battery Protection Modules: Microsecond-level shutdown capability ensures timely and reliable overcurrent/short-circuit protection, low on-resistance reduces self-heating of the protection board, extending battery life.
Low-Voltage High-Current Motor Drives: Extremely low PWM switching losses, smooth motor operation, significantly reduced controller temperature rise, suitable for power tools, drones, and other power scenarios.
Automotive Auxiliary Power Supplies: 30V withstand voltage margin and LFPAK56 package thermal performance are compatible with 12V/24V automotive buses, offering high reliability.
Server/Telecom Power Supplies: 90A high current carrying capacity meets the low-loss, high-density requirements of VRM and POL modules for power stages.
Portable and Energy Storage Devices: Ultra-low on-resistance improves boost/buck efficiency, small package aids compact design, suitable for high-power-density battery packs. Selection Summary: HAT2261H-EL-E-VB, with its 2.8mΩ ultra-low on-resistance, 90A high current capability, and advanced LFPAK56 package, provides ultimate energy efficiency and high-reliability solutions for 30V low-voltage high-power applications, making it the preferred power device for high-performance switching power supplies, motor drives, and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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