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HAT2166H-EL-E-VB Product details

Product introduction:

HAT2166H-EL-E-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. Using Trench technology, it combines extremely low on-resistance with excellent switching characteristics. The LFPAK56 package achieves an ideal balance between heat dissipation and footprint. The combination of 30V withstand voltage, 90A continuous current carrying capacity, and 2.8mΩ on-resistance makes it a preferred device for high-performance applications such as server power supplies, power tools, and automotive electronics, especially suitable for designs requiring compact layout and high power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 30V 0.8V 90A 3.36(mΩ) 2.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=30V: Suitable for 5V/12V/24V power systems, providing ample voltage margin for switching spikes, enhancing system anti-avalanche failure capability.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC or driver, simplifying gate drive circuit design.
Vth=0.8V (Typical): Ultra-low threshold voltage, fully turns on with low-voltage drive, ideal for battery-powered and low-voltage rail applications.
RDS(on)=2.8mΩ @ VGS=10V: Ultra-low on-resistance, minimal full-load loss, significantly reduces power stage temperature rise, reduces need for heatsinks or copper area.
RDS(on)=3.36mΩ @ VGS=4.5V: Maintains very low on-resistance even with low-voltage logic drive, meeting high-efficiency requirements for 5V drive scenarios.
ID=90A: Ample continuous current capability, easily handles transient high-current surges like motor stall and battery short-circuit protection.
Package LFPAK56: Thin, high-current surface-mount package, low parasitic inductance, supports high-frequency switching, while having excellent thermal path, suitable for high-density surface mounting.

Domain and module applications:


Synchronous Rectification DC-DC Converters: 2.8mΩ ultra-low internal resistance significantly reduces rectification losses, improving heavy-load efficiency by 2~3%, aiding in power module miniaturization.
Motor Drive Modules: 90A high current capability combined with low switching losses, suitable for power tools, drones, and low-voltage servo drives, offering smoother operation and lower temperature rise.
Battery Protection and BMS: Microsecond-level switching response and low conduction voltage drop ensure fast turn-off during overcurrent/short circuits, while reducing self-heating of the protection board.
Automotive Low-Voltage Load Switches: 30V voltage withstand and wide operating temperature range adapt to 12V/24V automotive buses, suitable for high-reliability control of lights, heaters, and electronic fans.
High-Power LED Lighting Drives: Low conduction voltage drop reduces constant current power loss, supports multi-channel parallel connection, improving overall light efficiency and lifespan.
Power Adapters and Fast Charging: The LFPAK56 package occupies a small area and has good high-frequency characteristics, suitable for high-power-density charger designs.
Server and Telecom Power Supplies: Leverages high current and low loss advantages in 12V bus architectures, meeting stringent energy efficiency and thermal constraints. Selection Summary: The HAT2166H-EL-E-VB, with its 2.8mΩ ultra-low on-resistance, 90A high current capability, and compact LFPAK56 package, provides a cost-effective complete solution for low-voltage, high-current switching applications, particularly suitable for power system designs with strict requirements on efficiency, temperature rise, and space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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