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HAT2165HWS-E-VB Product details

Product introduction:

HAT2165HWS-E-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. Trench technology balances ultra-low conduction loss and fast switching capability, and the LFPAK56 package achieves an excellent balance between heat dissipation performance and footprint. The combination of 30V withstand voltage, 90A current carrying capacity, and 2.8mΩ on-resistance makes it an ideal high cost-performance solution for replacing traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current, high-reliability applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 30V 0.8V 90A 3.36(mΩ) 2.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 30V 0.8V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=30V: Suitable for 5V/12V/24V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=0.8V (Typical): Ultra-low threshold voltage, fully turns on with low-voltage drive, ideal for battery voltage decay and low-voltage logic direct drive scenarios.
RDS(on)=2.8mΩ @ VGS=10V: Extremely low on-resistance, significantly reduces temperature rise at full load, can greatly reduce heat sink copper area, improving system power density.
RDS(on)=3.36mΩ @ VGS=4.5V: Maintains very low conduction loss even with low-voltage gate drive, supports direct 3.3V/5V logic drive.
ID=90A: Ample continuous current margin, can handle peak current surges like motor stall and hot-swap.
Package LFPAK56: Low parasitic inductance, excellent thermal path, supports high-frequency switching, saves PCB area while improving reliability.

Domain and module applications:


High-Current DC-DC Converters: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency by 2~3%, with extremely low on-resistance significantly reducing rectification losses.
Battery Protection Modules: 90A high current capability matches power batteries and energy storage systems, milliohm-level internal resistance reduces protection board self-heating, fast turn-off characteristic ensures microsecond-level protection during overcurrent/short circuits.
Low-Voltage Motor Drives: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise, suitable for high-power loads like power tools, fans, and pumps.
Automotive Auxiliary Power Supplies: 30V voltage margin and ultra-low internal resistance adapt to 12V/24V automotive buses, wide temperature and high surge immunity enhance reliability in harsh environments.
Server/Telecom Power Supplies: LFPAK56 small package combined with high current capability, suitable for high-density power modules, improving power conversion efficiency.
Electric Toys and Drones: High efficiency across light to heavy loads, ultra-low conduction voltage drop extends flight time, compact package meets space-constrained requirements.
Lithium Battery Tools and UPS: 90A continuous current and low heat generation characteristics, suitable for high-power brushless motor controllers and emergency power inverter stages. Selection Summary: The HAT2165HWS-E-VB achieves an excellent balance between extremely low on-resistance, high current capability, and compact LFPAK56 packaging, making it a high-performance universal choice for 30V low-voltage, high-power switching applications, especially suitable for projects with strict requirements on efficiency, heat dissipation, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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