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SQJ488EP-T1_GE3-VB Product details
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VBsemi SQJ488EP-T1_GE3-VB is a Single N-Channel MOSFET manufactured using Trench technology, designed for medium and high voltage power conversion and high-performance power control scenarios. Its LFPAK56 package offers excellent heat dissipation capability and low parasitic parameters, suitable for high-density power boards and compact power modules. The device provides stable switching characteristics within a 100V drain-source voltage range, supports a high current output of 69A, and features an on-resistance as low as 11.6mΩ (at VGS=10V), effectively reducing conduction losses and improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.4V (typical)
On-Resistance (VGS=4.5V): 13.92mΩ (typical)
On-Resistance (VGS=10V): 11.6mΩ (typical)
Maximum Drain Current (ID): 69A
Package: LFPAK56
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.4V (typical)
On-Resistance (VGS=4.5V): 13.92mΩ (typical)
On-Resistance (VGS=10V): 11.6mΩ (typical)
Maximum Drain Current (ID): 69A
Package: LFPAK56
Technology: Trench
Domain and module applications：
1. High-Efficiency DC-DC Converters: Used as the main switch or freewheeling MOSFET in synchronous rectification Buck/Boost circuits, leveraging extremely low on-resistance and high voltage capability to significantly improve conversion efficiency, suitable for high power density scenarios like communication and server power supplies.
2. Battery Charging and Discharging Management: Suitable for power tools, energy storage devices, and lithium battery pack protection boards, serving as a high-current charge/discharge path switch, supporting fast shutdown to ensure safe and reliable system operation.
3. Motor Drive Control: Drives 12V/24V/48V brushless DC or brushed motors, suitable for electric bicycles, electric scooters, pumps, and industrial fans, supporting high-frequency PWM speed control to reduce losses and heat generation.
4. Automotive Power Systems: Used for DC-DC pre-regulation, body control modules, and on-board chargers in 12V/24V vehicle networks, with sufficient voltage margin to withstand transient overvoltage conditions like load dump.
5. Power Adapters and Fast Charging: Used for secondary-side synchronous rectification in USB PD fast chargers and wall plug chargers, replacing Schottky diodes to reduce rectification voltage drop, improving charging efficiency and thermal performance.
6. Industrial Control and Automation: Used for PLC output driving, solenoid valve and relay coil control, leveraging high current capability and fast switching characteristics for precise load switching.
7. Solar Micro-Inverters and Storage Inverters: Used as auxiliary power or power switches, suitable for the DC-DC boost stage of distributed photovoltaic systems, helping to achieve higher power density and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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