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SQJ476EP-T1_GE3-VB Product details
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SQJ476EP-T1_GE3-VB is a Single N-MOSFET deeply optimized for medium-to-high voltage power switching scenarios. The Trench technology balances low switching losses with high reliability, and the LFPAK56 package achieves an excellent balance between heat dissipation capability and footprint area. The combination of 100V withstand voltage, 69A current carrying capacity, and 11.6mΩ on-resistance makes it an ideal high-density alternative to traditional DPAK or D2PAK packaged devices, especially suitable for high-current, high-reliability industrial and automotive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=100V: Suitable for 24V/48V/72V systems, provides ample voltage spike margin, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to MCU/PMIC, simplifying drive circuit design.
Vth=1.4V (typical): Can enter full conduction region even with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=11.6mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, can reduce heatsink copper area.
ID=69A: Ample continuous current margin, can handle peak demands of high-power motors, power supplies, and automotive loads.
Package LFPAK56: Small size, low parasitic parameters, supports high-frequency switching, saves PCB area while offering excellent power dissipation capability.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to MCU/PMIC, simplifying drive circuit design.
Vth=1.4V (typical): Can enter full conduction region even with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=11.6mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, can reduce heatsink copper area.
ID=69A: Ample continuous current margin, can handle peak demands of high-power motors, power supplies, and automotive loads.
Package LFPAK56: Small size, low parasitic parameters, supports high-frequency switching, saves PCB area while offering excellent power dissipation capability.
Domain and module applications：
High-Power DC-DC Converters: Replacing Schottky diodes in synchronous rectification significantly improves heavy-load efficiency, facilitating module miniaturization.
Automotive Auxiliary Power and Body Control: 100V voltage margin and wide operating temperature range adapt to 12V/24V vehicle buses, ensuring high reliability.
Motor Drive and Power Tools: Low PWM switching losses result in smoother motor operation and significantly reduced controller temperature rise.
Battery Protection and BMS Modules: Fast response ensures microsecond-level shutdown during overcurrent/short circuits; low internal resistance reduces self-heating of the protection board.
Industrial Power and Communication Base Stations: High current capability combined with low on-resistance meets high power density requirements, reducing system cooling costs.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, and improves overall luminaire efficiency.
Consumer Electronics Fast Chargers and Adapters: Small package and low internal resistance aid ultra-thin designs, improving charging efficiency and reliability. Selection Summary: The SQJ476EP-T1_GE3-VB achieves a high degree of balance between voltage rating, on-resistance, and package thermal performance, making it a cost-effective general-purpose choice for 100V medium-to-high voltage switching applications, especially suitable for projects with strict requirements for high current, high reliability, and space constraints.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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