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PSMN039-100YS,115-VB Product details

Product introduction:

PSMN039-100YS,115-VB is a Single N-MOS optimized for medium-to-high voltage power switching scenarios. It adopts Trench technology, balancing low switching loss and high reliability. The LFPAK56 package achieves a good balance between thermal performance and board space. The combination of 100V withstand voltage, 69A current carrying capacity, and 11.6mΩ on-resistance makes it an ideal high-density option to replace traditional DPAK/D2PAK packaged devices in communication power supplies, industrial control, and automotive systems, especially suitable for high-current, high-reliability applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 100V 1.4V 69A 13.92(mΩ) 11.6(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 100V 1.4V 69A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 100V 1.4V 69A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N

VDS=100V: Suitable for 48V/60V/72V/80V systems, providing voltage spike margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with 5V~12V logic levels, can directly connect to MCU/PMIC, simplifying gate drive design.
Vth=1.4V (Typical): Ensures full conduction even with low-voltage drive, suitable for battery voltage decay scenarios.
RDS(on)=11.6mΩ @ VGS=10V: Ultra-low on-resistance, greatly reducing full-load temperature rise, can reduce heat sink copper area.
RDS(on)=13.92mΩ @ VGS=4.5V: Maintains low conduction loss even under low-voltage drive, improving light-load efficiency.
ID=69A: Ample continuous current margin to handle high-current surges like motor startup and power hot-swap.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area and enhances board-level reliability.

Domain and module applications:


Communication Power and Server Power: Low on-resistance improves synchronous rectification efficiency, high current capability meets high power density module requirements.
Industrial Motor Drive: Low PWM switching loss, smoother motor operation, significantly reduced driver temperature rise.
Battery Protection and Energy Storage System: Fast switching characteristics ensure reliable shutdown during overcurrent/short circuit, low on-resistance reduces protection board self-heating.
DC-DC Converter: Replacing Schottky diodes in step-down topologies like 48V to 12V, improving heavy-load efficiency by 2~3%, facilitating module miniaturization.
Vehicle Auxiliary Power: 100V voltage margin adapts to 12V/24V/48V vehicle bus, wide operating temperature range, high reliability.
Power Tools and Garden Machinery: High current drive capability matches high-power brushless motors, Trench process enhances impact resistance.
LED High-Power Lighting Drive: Low voltage drop reduces constant current source power loss, supports multi-channel parallel connection, improving overall luminaire efficacy.
Selection Summary: PSMN039-100YS,115-VB achieves a precise balance between voltage rating, on-resistance, high current capability, and package heat dissipation, making it a cost-effective general-purpose choice for 100V medium-to-high voltage switching applications, especially for projects with strict requirements on efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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