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SQJ456EP-T2_GE3-VB Product details
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SQJ456EP-T2_GE3-VB is a Single N-MOS deeply optimized for medium-to-high voltage power switching scenarios. Trench technology balances low switching losses with high reliability, and the LFPAK56 package achieves an excellent balance between thermal performance and footprint. The combination of 100V voltage resistance, 69A current-carrying capacity, and 11.6mΩ on-resistance makes it an ideal compact option to replace traditional DPAK or D2PAK packaged devices, especially suitable for high power density and high reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=100V: Suitable for 24V/48V/60V systems, with ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with a wide drive voltage range, can directly connect to various gate drive ICs or PWM controllers, simplifying drive circuit design.
Vth=1.4V (typical): Fully turns on even with low gate drive voltage, especially suitable for scenarios with large battery voltage fluctuations.
RDS(on)=11.6mΩ @ VGS=10V, 13.92mΩ @ VGS=4.5V: Ultra-low on-resistance, greatly reduces temperature rise under full load, allowing smaller copper area for heat dissipation and improving system efficiency.
ID=69A: Ample continuous current margin to handle high current surge demands like motor startup and hot-swap.
Package LFPAK56: Compact size, low parasitic parameters, supports high-frequency switching, and has an excellent thermal path, suitable for high-density mounting.
Domain and module applications：
Automotive Power Systems: 100V withstand voltage covers 12V/24V automotive bus transient spikes, low internal resistance reduces power loss, suitable for DC-DC converters and on-board chargers.
Motor Drive and Power Tools: High current capability and low on-resistance match high-power motors, low PWM switching losses, significantly reducing controller temperature rise.
Server/Communication Power Supplies: Replaces multiple paralleled MOSFETs in synchronous rectification, reducing conduction losses, improving heavy-load conversion efficiency, and aiding power module miniaturization.
Battery Protection and BMS: Fast switching characteristics ensure reliable shutdown during overcurrent/short circuit, low internal resistance reduces self-heating of the protection board, suitable for high-voltage lithium battery packs.
Industrial Control and Automation: Wide SOA and robust package handle inductive load surges, suitable for PLC output stages, solenoid valve drivers, and industrial power supplies.
LED Lighting Drivers: Low voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall machine efficiency and reliability.
Photovoltaic Inverter Auxiliary Circuits: High voltage tolerance and low loss characteristics adapt to photovoltaic panel voltage fluctuations, improving system steady-state and transient performance. Selection Summary: SQJ456EP-T2_GE3-VB achieves an excellent balance between voltage rating, on-resistance, package thermal performance, and system cost. It is a cost-effective general-purpose choice for 100V medium-to-low voltage switching applications, especially suitable for projects with strict requirements for power density, reliability, and temperature rise.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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