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SQJ118EP-T1_GE3-VB Product details
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The SQJ118EP-T1_GE3-VB is a Single N-MOSFET deeply optimized for medium-voltage power switching applications. Its Trench technology balances low switching losses with high reliability, while the LFPAK56 package achieves an excellent balance between thermal performance and board footprint. The combination of 100V voltage tolerance, 69A current-carrying capability, and 11.6mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for applications requiring high power density and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=100V: Suitable for 24V/36V/48V/60V systems, providing ample voltage spike margin, reducing avalanche breakdown risk, enhancing system robustness.
VGS=±20V: Compatible with 5V~12V logic levels, can directly connect to MCU/PMIC, simplifying drive circuit design.
Vth=1.4V (Typical): Low threshold voltage ensures full conduction even with low-voltage drive, suitable for battery-powered and low-voltage logic control scenarios.
RDS(on)=11.6mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction losses, effectively decreasing heatsink size and system temperature rise.
ID=69A: Ample continuous current margin, capable of handling high transient current demands like motor startup and inductive load surges.
Package LFPAK56: Low parasitic inductance and low thermal resistance design, supports high-frequency switching and high current transmission, while saving PCB area and improving reliability.
Domain and module applications：
Motor Drives: Extremely low on-resistance and voltage margin suit industrial and automotive motors. Low PWM switching losses result in a noticeable temperature drop in the controller.
DC-DC Converters: Replaces traditional devices in synchronous rectification and buck-boost topologies. Heavy-load efficiency can increase by 2-3%, facilitating power module miniaturization.
Lithium Battery Protection and BMS: High voltage withstand and fast switching capability ensure reliable overcharge/overcurrent protection. Low internal resistance reduces self-heating on the protection board.
Automotive Power Systems: 100V voltage withstand covers 12V/24V/48V automotive electrical architectures. Wide temperature range and high surge tolerance meet stringent automotive requirements.
Communication and Server Power Supplies: High current density and low thermal resistance characteristics suit efficient rectification stages, improving overall power density.
Industrial Power Supplies and Power Tools: Robust overcurrent capability and low conduction losses handle impact loads, extending tool runtime and lifespan.
Photovoltaic and Energy Storage Systems: High voltage withstand and low loss characteristics are suitable for MPPT and charge/discharge switches, improving system conversion efficiency. Selection Summary: SQJ118EP-T1_GE3-VB achieves an excellent balance between voltage rating, current carrying capacity, on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 100V power switching applications, especially suitable for projects with strict requirements on heat dissipation, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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