中文
English
SQJ116EP-T1_GE3-VB Product details
Back to previous pageProduct introduction：
Still troubled by low efficiency and severe device heating in high-current power conversion? Let the VBsemi SQJ116EP-T1_GE3-VB solve your worries! This N-MOSFET in an LFPAK56 package impresses with 100V voltage tolerance and 69A high-current capability, featuring an ultra-low on-resistance of 11.6mΩ for low losses and minimal heat generation. Combined with Trench technology for fast switching and excellent reliability, it excels in industrial power supplies, automotive-grade systems, and high-power-density modules, making it the 'hardcore workhorse' for power engineers.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 100V (High margin design, more reassuring against transient surges)
Drive Range: ±20V (Compatible with multiple logic level drives, flexible to use)
Turn-on Threshold: 1.4V (Reliable turn-on even with low-voltage drive)
Ultra-Low On-Resistance: 11.6mΩ @ 10V, 13.92mΩ @ 4.5V (Extremely low conduction losses, less heat generation)
High Current Capability: 69A (Strong continuous current carrying capacity)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for high-power surface mount)
Technology: Trench (Low switching losses, fast response speed)
Drive Range: ±20V (Compatible with multiple logic level drives, flexible to use)
Turn-on Threshold: 1.4V (Reliable turn-on even with low-voltage drive)
Ultra-Low On-Resistance: 11.6mΩ @ 10V, 13.92mΩ @ 4.5V (Extremely low conduction losses, less heat generation)
High Current Capability: 69A (Strong continuous current carrying capacity)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for high-power surface mount)
Technology: Trench (Low switching losses, fast response speed)
Domain and module applications：
– Six Hot Scenarios, One MOSFET Handles It All
Industrial Power Supplies: AC-DC/DC-DC synchronous rectification, improved efficiency, lower temperature rise
Motor Drives: High-power BLDC/brushed motors, smooth speed control, strong overcurrent capability
Battery Management Systems: Large-capacity lithium battery protection, fast fault current interruption, safeguarding safety
Automotive Power Supplies: Supports 12V/24V systems, impact-resistant, high-temperature tolerant, a reliable automotive-grade choice
Server and Communication Power Supplies: High-density power conversion, aiding module miniaturization and efficient operation
Power Tools and Energy Storage Devices: Unyielding high-rate discharge, delivering sustained powerful output. SQJ116EP-T1_GE3-VB – High voltage, high current, low resistance, giving your power design more confidence!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
