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NVMYS012N10MCLTWG-VB Product details
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The VBsemi NVMYS012N10MCLTWG-VB is a Single N-channel MOSFET belonging to the VBsemi product series. This product features high performance and stability, suitable for various power conversion and control applications. Manufactured using advanced Trench technology, it has a drain-source voltage (VDS) of 100V and operates reliably within a gate-source voltage (VGS) range of ±20V. The product is packaged in LFPAK56, combining good heat dissipation performance with a compact footprint, suitable for high-efficiency, high-power-density design requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Drain-Source Voltage (VDS): 100V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.4V
- On-Resistance (VGS=4.5V): 13.92mΩ
- On-Resistance (VGS=10V): 11.6mΩ
- Maximum Drain Current (ID): 69A
- Package Type: LFPAK56
- Technology: Trench
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.4V
- On-Resistance (VGS=4.5V): 13.92mΩ
- On-Resistance (VGS=10V): 11.6mΩ
- Maximum Drain Current (ID): 69A
- Package Type: LFPAK56
- Technology: Trench
Domain and module applications：
1. High-Efficiency DC-DC Converters: NVMYS012N10MCLTWG-VB is suitable for synchronous rectification and switching circuits. The low on-resistance and 100V voltage withstand capability help improve conversion efficiency and meet the design requirements of compact power modules.
2. Motor Drive Control Modules: This model can be used in industrial and consumer motor drive circuits, such as power tools, fans, and water pumps, enabling precise motor start/stop and speed control.
3. Battery Protection and Management Systems: In battery charge/discharge management circuits, it can be used as a switching device, withstanding high currents and ensuring extremely low path losses, effectively improving system safety and battery lifespan.
4. Automotive Auxiliary Power Systems: Suitable for automotive DC-DC converters and various auxiliary power supply circuits, capable of handling voltage fluctuations in the automotive electronic environment, providing stable and reliable power conversion.
5. Communication and Server Power Supplies: In high-power power supply modules such as communication base stations and servers, this device can perform rectification or power switching functions, meeting high reliability and high thermal load operation requirements.
6. LED Lighting Drive Circuits: Can be used in high-voltage LED lighting drive modules as a constant current switch or power stage component, ensuring efficient and stable operation of the lighting system.
7. Industrial Power Supplies and Energy Storage Systems: In industrial power supplies, photovoltaic inverters, and energy storage converters, this MOSFET can serve as a power switch, adapting to high voltage and high current operating conditions, improving overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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