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2SJ599(0)-Z-E2-AZ-VB Product details
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Imagine this: You are designing a high-power-density power system, facing a -60V bus voltage and a load current of up to 35A, while needing to control temperature rise and losses on a limited PCB area. Ordinary P-channel MOS tubes either lack sufficient voltage tolerance or have high on-resistance. The VBsemi 2SJ599(0)-Z-E2-AZ-VB is designed for this—it integrates -60V withstand voltage, -35A current carrying capacity, and a low on-resistance of 46mΩ into a reliable TO252 package, making high-side switch design no longer a compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 58(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Voltage Rating -60V, covering industrial and automotive-grade applications
Gate Drive Range ±20V, compatible with a wide range of drive voltages
Threshold Voltage -1.7V, directly drivable by low-voltage logic
On-Resistance 58mΩ (4.5V drive) / 46mΩ (10V drive), lower loss
Maximum Current -35A, capable of switching high-power loads
Trench technology, combining switching performance and conduction characteristics
Gate Drive Range ±20V, compatible with a wide range of drive voltages
Threshold Voltage -1.7V, directly drivable by low-voltage logic
On-Resistance 58mΩ (4.5V drive) / 46mΩ (10V drive), lower loss
Maximum Current -35A, capable of switching high-power loads
Trench technology, combining switching performance and conduction characteristics
Domain and module applications：
Motor Drive / H-Bridge Circuit – Used as a high-side P-channel switch, simplifying drive design and reducing conduction losses.
Battery Reverse Polarity Protection – Leverages low on-resistance and high voltage tolerance to effectively reduce voltage drop and improve system efficiency.
DC-DC Converter – Acts as a synchronous rectifier or main switch in buck-boost topologies, optimizing thermal performance.
Power Management Module – Used for load switching on -60V rails, providing fast response, safety, and reliability.
Industrial Control / Frequency Converter – Withstands harsh voltage fluctuations, providing a stable power switching solution for the system.
Power Tools / Garden Machinery – Handles high current surges, delivering continuous output without faltering. One-sentence summary: The 2SJ599(0)-Z-E2-AZ-VB is not an ordinary MOSFET; it is the "cornerstone of reliability" and "efficiency engine" for your high-side P-channel designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
