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2SJ485-E-VB Product details
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VBsemi 2SJ485-E-VB is a Single P-channel field-effect transistor belonging to the VBsemi brand product series. This product features high performance and reliability, suitable for various medium and low voltage power control and regulation applications. Manufactured using Trench technology, it has a drain-source voltage (VDS) of -60V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in TO252, suitable for application environments requiring efficient heat dissipation and medium power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100(mΩ) | 90(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Drain-Source Voltage (VDS): -60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
On-Resistance (VGS=4.5V): 72 mΩ
On-Resistance (VGS=10V): 61 mΩ
Maximum Drain Current (ID): -30A
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
On-Resistance (VGS=4.5V): 72 mΩ
On-Resistance (VGS=10V): 61 mΩ
Maximum Drain Current (ID): -30A
Technology: Trench
Domain and module applications：
1. Load switch module: 2SJ485-E-VB is suitable for various medium and low voltage load switch circuits, such as power management and peripheral power control, providing low on-resistance and high current switching capability, effectively reducing system power consumption.
2. Battery protection module: In battery management systems, this model can be used as a P-channel switching element to control the on/off of the charge/discharge circuit, ensuring battery safety and extending life.
3. Reverse polarity protection: This device can be used in reverse polarity protection circuits at the DC power input, utilizing the P-channel MOSFET's low voltage drop and high current characteristics for efficient and reliable protection.
4. Motor drive module: Suitable for small motor drive control, such as start/stop and speed control of power tools, fans, pumps, etc., meeting medium power drive requirements.
5. DC-DC converter: In synchronous rectification and switching regulator circuits, 2SJ485-E-VB can be used as a P-channel switching transistor, helping to improve conversion efficiency and simplify drive circuit design.
6. Automotive electronic systems: In applications like vehicle auxiliary power supplies, lighting control, and infotainment systems, this product can serve as a power switch or power management component, providing stable power supply.
7. Industrial control module: Suitable for power control and signal switching in industrial equipment such as PLCs and instrumentation, leveraging its voltage and current capabilities to ensure stable operation in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
