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TJ60S06M3L(T6L1,NQ-VB Product details
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VBsemi TJ60S06M3L(T6L1,NQ-VB is a Single P-channel field-effect transistor belonging to the VBsemi brand product series. This product offers high performance and stability, suitable for various power control and regulation applications. Manufactured with Trench technology, it features a drain-source voltage (VDS) of -60V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in TO252, suitable for medium-power application environments requiring efficient heat dissipation and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | 8(mΩ) | 5.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Drain-Source Voltage (VDS): -60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -3V
On-Resistance (VGS=4.5V): 8 mΩ
On-Resistance (VGS=10V): 5.5 mΩ
Max Drain Current (ID): -70A
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -3V
On-Resistance (VGS=4.5V): 8 mΩ
On-Resistance (VGS=10V): 5.5 mΩ
Max Drain Current (ID): -70A
Technology: Trench
Domain and module applications：
1. Power Management Module: TJ60S06M3L(T6L1,NQ-VB is suitable for power management circuits such as DC-DC converters, load switches, and power inverters, providing efficient power conversion with low on-resistance and high current capability.
2. Battery Protection and Charge/Discharge Control: In battery management systems, this P-channel MOSFET can serve as a high-side switching element to control the charge/discharge loop, protecting the battery from overcurrent, over-discharge, and other abnormal conditions, ensuring battery safety and lifespan.
3. Motor Drive Module: This model is suitable for low or medium voltage motor drive circuits such as power tools, fan controllers, and DC motor speed control modules, used for controlling motor start/stop and speed regulation, with low loss and high reliability.
4. Automotive Electronics: In automotive electronic systems, TJ60S06M3L(T6L1,NQ-VB can be used in auxiliary power management, automotive lighting control, window lift motor drive modules, etc., providing stable and reliable power support for on-board devices.
5. Industrial Control and Automation: This device can be applied in PLCs, servo drives, and industrial sensor interface circuits for signal switching and power control, meeting the requirements for device stability and durability in industrial environments.
6. Consumer Electronics and High-Power Switches: In smart home appliances, power tools, audio amplifiers, etc., this MOSFET can be used for power switching and power amplification output stages, achieving low conduction loss and efficient power distribution.
7. Negative Voltage Circuits and Load Switches: Leveraging P-channel characteristics, this product is suitable for switching control of negative voltage power rails, battery reverse polarity protection, and high-side load switches, simplifying drive circuit design and improving system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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