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TJ10S04M3L(T6L1,NQ-VB Product details
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Still troubled by high heat generation and complex drive in negative voltage power management? Let VBsemi TJ10S04M3L relieve your worries! This P-MOS transistor in TO252 package not only offers excellent heat dissipation but also withstands a high current of -40A, with an on-resistance as low as 17mΩ, significantly reducing conduction losses compared to similar competing products. With Trench process, it features fast switching speed and low switching loss, and the -40V withstand voltage covers most load switching and motor control applications, making it a 'negative voltage weapon' for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -1.7V | -40A | 21(mΩ) | 17(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -1.7V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -1.7V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Voltage Rating: -40V (Ample margin for negative voltage applications, safe and reliable)
Drive Range: ±20V (Compatible with 3.3V/5V/12V drive, flexible adaptation)
Threshold Voltage: -1.7V (Easily driven by low-voltage logic, no complex level shifting required)
Ultra-Low On-Resistance: 17mΩ @ 10V (Extremely low conduction losses, less heat generation)
High Current Capability: -40A (Large package, high energy, capable of handling high-power loads)
Package: TO252 (DPAK, excellent heat dissipation, suitable for power density design)
Drive Range: ±20V (Compatible with 3.3V/5V/12V drive, flexible adaptation)
Threshold Voltage: -1.7V (Easily driven by low-voltage logic, no complex level shifting required)
Ultra-Low On-Resistance: 17mΩ @ 10V (Extremely low conduction losses, less heat generation)
High Current Capability: -40A (Large package, high energy, capable of handling high-power loads)
Package: TO252 (DPAK, excellent heat dissipation, suitable for power density design)
Domain and module applications：
– Seven Major Scenarios, One Solution
Load Switch: System power on/off control, low voltage drop, less heat generation, high reliability
Battery Protection: Abnormal power-off on the negative voltage side, instant fault isolation, protecting cell safety
Motor Drive: Fans, pumps, power tools, P-MOS high-side drive is simple and efficient
Power Management: Negative voltage DC-DC conversion, synchronous rectification solution improves efficiency
Automotive Electronics: In-vehicle infotainment, body control, vibration resistant, wide temperature range, stable and durable
LED Lighting: Constant current and constant voltage control, uniform brightness, no flicker interference
Industrial Control: PLC, sensor interfaces, fast switching speed, long life
TJ10S04M3L – High current, low resistance, making your negative voltage power design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
