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RD3G04BBJHRBTL-VB Product details
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RD3G04BBJHRBTL-VB is a Single P-MOS optimized for low-voltage power switching scenarios. The Trench process balances low switching loss with high reliability, and the TO252 package achieves a good balance between heat dissipation and soldering processability. The combination of -40V withstand voltage, -40A current carrying capacity, and 17mΩ on-resistance makes it an ideal cost-reducing and stability-enhancing alternative to traditional DPAK or SOP-8 packaged devices, especially suitable for medium-to-high power, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -1.7V | -40A | 21(mΩ) | 17(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -1.7V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -1.7V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
VDS=-40V: Suitable for 12V/24V systems, providing ample margin for negative voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with a wide range of logic level drives, can directly connect to MCU/PMIC, simplifying gate drive circuit design.
Vth=-1.7V (Typical): Low threshold voltage ensures reliable turn-on and full conduction even in battery voltage decay or low-voltage drive scenarios.
RDS(on)=17mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, allowing for reduced heat sink copper area; RDS(on) is 21mΩ at VGS=4.5V, maintaining excellent conduction performance.
ID=-40A: Ample continuous current margin to handle peak demands of most motors, batteries, and automotive auxiliary loads.
Package TO252: Low thermal resistance, strong heat dissipation capability, suitable for higher power density applications, compatible with standard SMT processes for mass production.
VGS=±20V: Compatible with a wide range of logic level drives, can directly connect to MCU/PMIC, simplifying gate drive circuit design.
Vth=-1.7V (Typical): Low threshold voltage ensures reliable turn-on and full conduction even in battery voltage decay or low-voltage drive scenarios.
RDS(on)=17mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, allowing for reduced heat sink copper area; RDS(on) is 21mΩ at VGS=4.5V, maintaining excellent conduction performance.
ID=-40A: Ample continuous current margin to handle peak demands of most motors, batteries, and automotive auxiliary loads.
Package TO252: Low thermal resistance, strong heat dissipation capability, suitable for higher power density applications, compatible with standard SMT processes for mass production.
Domain and module applications：
Power Management Module: Low internal resistance improves negative voltage buck-boost conversion efficiency, reduces losses, and extends battery life.
Battery Protection Board: P-MOS facilitates high-side control, fast turn-off characteristics ensure reliable protection during overcurrent/short circuit, low internal resistance reduces protection board self-heating.
Low-Voltage Motor Drive: Low PWM switching losses, smoother motor commutation, significantly reduced controller temperature rise.
Automotive Auxiliary Power: -40V voltage tolerance margin and strong heat dissipation capability of TO252 package are suitable for 12V/24V automotive bus, reliably handling transient impacts like load dump.
Power Tools and Industrial Control: High current carrying capacity meets high-power start/stop requirements, Trench process enhances surge immunity.
LED Lighting Drive: Low on-resistance reduces constant current source power consumption, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converter: Replaces traditional P-MOS in synchronous rectification or load switch applications, significantly improving heavy-load efficiency, facilitating module miniaturization. Selection Summary: RD3G04BBJHRBTL-VB achieves a balance between performance margin, package heat dissipation capability, and system cost. It is a cost-effective general-purpose choice for -40V low-voltage P-MOS switch applications, especially suitable for projects with strict requirements on current capability, heat dissipation, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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