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TJ60S04M3L,LXHQ-VB Product details

Product introduction:

TJ60S04M3L,LXHQ-VB is a high-current, low-impedance P-channel MOS transistor in a TO252 package, with -40V withstand voltage and -90A current carrying capacity. Utilizing Trench technology, it achieves an on-resistance as low as 6.8mΩ at 10V drive, resulting in low losses and low heat generation. The gate drive is flexible with a ±20V wide range, suitable for various low-voltage control and power conversion scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -40V -2V -90A 13(mΩ) 6.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -40V -2V -90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -40V -2V -90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Voltage Rating: -40V
Drive Voltage: ±20V
Turn-on Threshold: -2V
On-Resistance (4.5V Drive): 13 mΩ
On-Resistance (10V Drive): 6.8 mΩ
Maximum Current: -90A
Package: TO252

Domain and module applications:


Power Management Module → Load switch, crisp switching, low voltage drop
Battery Charge/Discharge Protection → Efficient shutdown, extends battery life
Motor Drive Control → High current output, smooth speed regulation
DC-DC Converter → Synchronous rectification, improved efficiency
Automotive Electronic System → Shock resistant, high temperature resistant, stable and reliable
Industrial Control Equipment → Low loss, worry-free long-term operation
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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