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2SJ645-E-VB Product details
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VBsemi 2SJ645-E-VB is a Single P-channel field-effect transistor, belonging to the VBsemi brand product series. This product offers high performance and stability, suitable for various power control and regulation applications. Manufactured with Trench technology, it has a drain-source voltage (VDS) of -30V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in TO252, suitable for applications requiring efficient heat dissipation and medium power output.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 46(mΩ) | 33(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Drain-Source Voltage (VDS): -30V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
Gate-Source On-Resistance (VGS=4.5V): 46 mΩ
Gate-Source On-Resistance (VGS=10V): 33 mΩ
Maximum Drain Current (ID): -38A
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
Gate-Source On-Resistance (VGS=4.5V): 46 mΩ
Gate-Source On-Resistance (VGS=10V): 33 mΩ
Maximum Drain Current (ID): -38A
Technology: Trench
Domain and module applications：
1. Power Management Module: 2SJ645-E-VB is suitable for power management circuits such as DC-DC converters, load switches, and power path management, providing low on-resistance and high current handling capability to improve system efficiency.
2. Battery Protection and Charge/Discharge Control: In battery management systems, this device can be used as a P-channel switch to control the on/off of the charging and discharging circuit, ensuring battery safety and extending service life.
3. Motor Drive Module: This model is suitable for low-voltage motor control circuits, such as fan drives, power tools, and motor start/stop and speed control in automation equipment.
4. Load Switch and Power Distribution: In the power distribution network of various electronic devices, 2SJ645-E-VB can serve as a high-side load switch, enabling reliable power switching and distribution.
5. Automotive Electronics System: This product can be used in vehicle auxiliary power supplies, lamp control, and body electronics modules, meeting the reliability and temperature characteristics requirements of automotive electronics.
6. Industrial Control and Automation: In PLCs, sensor interfaces, and industrial control boards, this MOSFET can be used for signal switching and power driving, adapting to harsh industrial environments.
7. Reverse Polarity Protection Circuit: Utilizing the low on-voltage drop characteristic of P-channel MOSFETs, this device is commonly used in input power reverse polarity protection circuits to provide system safety protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
