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RD3E07BBJHRBTL-VB Product details
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VBsemi RD3E07BBJHRBTL-VB is a Single P-channel field-effect transistor, belonging to the VBsemi brand product series. This product utilizes advanced Trench technology, featuring extremely low on-resistance and excellent current handling capability, suitable for various power control and conversion applications. The device has a drain-source voltage (VDS) of -30V, supports a gate-source voltage (VGS) of ±20V, and is packaged in TO252, balancing heat dissipation performance and ease of installation, making it suitable for circuit designs with medium power density requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 11(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Drain-Source Voltage (VDS): -30V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -2.5V
On-Resistance (VGS=4.5V): 11 mΩ
On-Resistance (VGS=10V): 9 mΩ
Maximum Drain Current (ID): -60A
Package: TO252
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -2.5V
On-Resistance (VGS=4.5V): 11 mΩ
On-Resistance (VGS=10V): 9 mΩ
Maximum Drain Current (ID): -60A
Package: TO252
Technology: Trench
Domain and module applications：
1. Power Management Module: RD3E07BBJHRBTL-VB can be used for switch control of negative voltage power rails, load switches, and power path management. With an ultra-low on-resistance of 9mΩ, it effectively reduces conduction loss and improves system efficiency.
2. Battery Protection Circuit: In lithium battery or multi-cell battery pack protection boards, this device can serve as a high-side switch for the discharge circuit, supporting high current switching of -60A, ensuring safe and reliable operation of the battery system.
3. Motor Drive Control: Suitable for low-voltage DC motor drive modules, such as motor start/stop and speed control in power tools, fans, pumps, etc. Its low on-resistance helps reduce heat generation and improve driver lifespan.
4. DC-DC Converter: Can be used as a rectifier or switching device in synchronous buck or boost converters, especially suitable for negative voltage supplies in analog circuits or audio power amplifiers, optimizing converter dynamic response and efficiency.
5. Automotive Electronics System: Used for power switching in vehicle auxiliary power supplies and body control modules, meeting the -30V voltage level requirement and providing excellent surge current capability.
6. Industrial Control and Automation: In industrial control circuits such as PLCs, sensor interfaces, and relay drivers, this MOSFET can serve as an output stage switch for stable and reliable high-current driving.
7. Consumer Electronics and Portable Devices: Suitable for power interface control in products like smart locks, e-cigarettes, and power tool battery packs. The TO252 package facilitates SMT production, suitable for compact PCB layouts.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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