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2SJ687-ZK-E2-AY-VB Product details

Product introduction:

2SJ687-ZK-E2-AY-VB is a Single P-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench process balances low switching losses with high reliability, and the TO252 package strikes a balance between heat dissipation capability and board area. The combination of 30V withstand voltage, 100A current carrying capacity, and 5mΩ on-resistance makes it an ideal high-cost-performance alternative to traditional DPAK or SOP-8 packaged devices, especially suitable for high-current, high-density power systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -3V -100A 7(mΩ) 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -3V -100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -3V -100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
VDS=-30V: Suitable for 12V/24V systems, compatible with negative voltage topologies, providing sufficient voltage spike margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to MCU/PMIC driver stages, simplifying gate drive circuits.
Vth=-3V (typical): Negative threshold voltage design ensures full conduction in the gate drive range of -4.5V to -10V, suitable for battery voltage fluctuation scenarios.
RDS(on)=5mΩ @ VGS=10V, 7mΩ @ VGS=4.5V: Ultra-low on-resistance, significantly reduces temperature rise under full load, enabling smaller heatsinks or copper areas.
ID=-100A: Ample continuous current margin to handle transient high current surges such as startup and stall conditions, enhancing system robustness.
Package TO252: Low thermal resistance, short heat dissipation path, supports high power output, and compatible with standard SMT processes for mass production.

Domain and module applications:


Battery Discharge Protection Module: Low internal resistance reduces protection board self-heating, fast shutdown capability ensures reliable negative rail disconnection during overcurrent/short circuit.
Low-Voltage High-Side Switch: P-MOS architecture facilitates direct control of the positive power rail, suitable for automotive body control, industrial PLC output stages.
DC-DC Converter: Replaces Schottky diodes in synchronous rectification or load switches, improving heavy-load efficiency by 2-3%, beneficial for module miniaturization.
Motor Drive and Brake Control: Low PWM switching losses, high current carrying capability suitable for inductive loads like brushed motors and power tools.
Reverse Polarity Protection: Simplifies drive circuit compared to N-MOS, low conduction voltage drop reduces system voltage loss, improving battery utilization.
Vehicle Auxiliary Power Supply: Voltage margin and wide operating temperature range (-55~150°C) adapt to 12V/24V vehicle bus, high reliability.
Power Tools and Garden Machinery: 100A peak current margin accommodates stall scenarios, TO252 package facilitates layout on controller power boards. Selection Summary: 2SJ687-ZK-E2-AY-VB achieves an excellent balance between current capability, on-resistance, and package heat dissipation. It is a high-performance general-purpose choice for 30V low-voltage, high-power P-channel switching applications, especially suitable for projects with strict requirements on heat dissipation, surge current, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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