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2SJ195-TL-E-VB Product details
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The VBsemi 2SJ195-TL-E-VB is a Single P-channel field-effect transistor from the VBsemi brand product series. This product features high voltage tolerance, low on-resistance, and good switching characteristics, making it suitable for various power control and circuit protection applications. Manufactured using Trench technology, it has a drain-source voltage (VDS) of -100V and operates reliably within a gate-source voltage (VGS) range of ±20V. The product is packaged in TO252, offering good heat dissipation performance, suitable for medium power density design environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 280(mΩ) | 250(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Drain-Source Voltage (VDS): -100V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -2V
On-Resistance (VGS=4.5V): 280mΩ
On-Resistance (VGS=10V): 250mΩ
Maximum Drain Current (ID): -8.8A
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -2V
On-Resistance (VGS=4.5V): 280mΩ
On-Resistance (VGS=10V): 250mΩ
Maximum Drain Current (ID): -8.8A
Technology: Trench
Domain and module applications：
1. Power Reverse Polarity Protection Circuits: The 2SJ195-TL-E-VB can be used in reverse connection protection modules at DC power input terminals, acting as a P-channel switch to effectively prevent damage to downstream circuits from incorrect power polarity.
2. Load Switch Modules: Suitable for power on/off control of medium and low voltage loads, such as power management units in industrial control boards and communication equipment, enabling low-loss power distribution.
3. Battery Charge/Discharge Management: In battery protection boards or charge/discharge control circuits, this device can serve as a high-side switch for the discharge path, supporting high current switching to ensure safe and stable battery system operation.
4. DC-DC Converter Auxiliary Circuits: Suitable for startup circuits, clamping circuits, or synchronous rectifier auxiliary switches in DC-DC converters, improving conversion efficiency and system reliability.
5. Motor Drive Control: Can be used for start/stop and speed control modules of small DC motors, especially in motor drive circuits requiring high-side switch control.
6. LED Lighting Drivers: In LED constant current drive or dimming control circuits, this P-channel MOSFET can be used as a switch or linear regulation element, supporting wide voltage input applications.
7. Automotive Electronics Systems: Suitable for vehicle power management, body control modules, and auxiliary equipment power supply circuits, meeting the -100V voltage rating requirement for suppressing transient voltages, providing stable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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