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SIHD6N80AET4-GE3-VB Product details
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Still troubled by high loss and insufficient reliability in high-voltage switching power supplies? VBsemi SIHD6N80AET4-GE3-VB is here to help! This TO252-packaged N-MOSFET uses advanced SJ_Multi-EPI super junction technology, with a withstand voltage of up to 800V and on-resistance of only 1.1Ω, delivering excellent switching and conduction loss performance. With ±30V wide gate drive range and 5A current capability, it easily handles various high-voltage and high-frequency applications, serving as a "high-voltage guardian" for industrial and consumer power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 800V (Sufficient margin for high-voltage systems, safe and stable)
Drive Range: ±30V (Compatible with various gate drive circuits)
Turn-On Threshold: 3.5V (Reliable turn-on with standard logic levels)
On-Resistance: 1100mΩ @ 10V (Super junction technology, excellent loss control)
Drain Current: 5A (Better heat dissipation with TO252 package)
Technology Platform: SJ_Multi-EPI (Multi-Epitaxial Super Junction, fast switching, low EMI)
Package: TO252 (Suitable for automated assembly, heat sink pad enhances thermal performance)
Drive Range: ±30V (Compatible with various gate drive circuits)
Turn-On Threshold: 3.5V (Reliable turn-on with standard logic levels)
On-Resistance: 1100mΩ @ 10V (Super junction technology, excellent loss control)
Drain Current: 5A (Better heat dissipation with TO252 package)
Technology Platform: SJ_Multi-EPI (Multi-Epitaxial Super Junction, fast switching, low EMI)
Package: TO252 (Suitable for automated assembly, heat sink pad enhances thermal performance)
Domain and module applications：
— One Chip for Six High-Voltage Scenarios
Switching Power Supply: High-voltage DC-DC, flyback/forward topology, significant efficiency improvement
LED Lighting Driver: High withstand voltage constant current solution, stable and flicker-free
Industrial Control: Motor drive auxiliary power supply, inverter high-voltage bias, impact-resistant and high-voltage tolerant
Charging Pile and On-board Charger: High-voltage power conversion, reliable and durable
Photovoltaic Inverter: Bus high-voltage conversion, low loss helps system efficiency
High-voltage Battery Management: Battery pack charge/discharge protection, fast response, safe and reliable SIHD6N80AET4-GE3-VB — Superjunction high voltage, stable and efficient, making your power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
