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SIHD6N80AET1-GE3-VB Product details
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SIHD6N80AET1-GE3-VB is a Single N-MOS optimized for high-voltage power switching scenarios, using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology to achieve a better balance of conduction characteristics and switching performance at 800V withstand voltage level. The TO252 packaging offers good heat dissipation capability and compact footprint, suitable for applications with dual requirements for reliability and space, such as industrial power supplies, charging modules, and high-voltage auxiliary circuits. The combination of 5A continuous current and 1.1Ω on-resistance makes it a cost-effective choice in medium and small power high-voltage switching solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VDS=800V: Covers typical voltage platforms for three-phase rectification, industrial bus, and high-voltage auxiliary power supplies, providing sufficient voltage margin to reduce the risk of voltage spike breakdown.
VGS=±30V: Wide gate drive voltage range, compatible with various PWM controllers and driver ICs, strong anti-gate overshoot capability, simplifying drive circuit design.
Vth=3.5V (Typical): Moderate threshold voltage effectively prevents false turn-on while supporting 10V and above standard gate drive, ensuring clear and reliable switching states.
RDS(on)=1100mΩ @ VGS=10V: Super junction technology optimizes high-voltage conduction losses, at a reasonable level for the 800V voltage class, suitable for light to medium load efficiency-priority scenarios.
ID=5A: Continuous current capability meets small to medium power high-voltage load requirements, and with the TO252 package, it effectively dissipates heat, ensuring long-term stable operation.
Package TO252: Standard DPAK form factor, good compatibility with soldering processes, large heat sink pad, low thermal resistance, suitable for direct PCB heat dissipation design.
VGS=±30V: Wide gate drive voltage range, compatible with various PWM controllers and driver ICs, strong anti-gate overshoot capability, simplifying drive circuit design.
Vth=3.5V (Typical): Moderate threshold voltage effectively prevents false turn-on while supporting 10V and above standard gate drive, ensuring clear and reliable switching states.
RDS(on)=1100mΩ @ VGS=10V: Super junction technology optimizes high-voltage conduction losses, at a reasonable level for the 800V voltage class, suitable for light to medium load efficiency-priority scenarios.
ID=5A: Continuous current capability meets small to medium power high-voltage load requirements, and with the TO252 package, it effectively dissipates heat, ensuring long-term stable operation.
Package TO252: Standard DPAK form factor, good compatibility with soldering processes, large heat sink pad, low thermal resistance, suitable for direct PCB heat dissipation design.
Domain and module applications：
Industrial Auxiliary Power Supply: 800V withstand voltage can be directly used for bus power supply after three-phase rectification; superjunction technology reduces switching losses and improves power conversion efficiency.
Charger and Adapter: Used for high-voltage side switching or auxiliary winding power supply; 5A current capability adapts to mainstream fast charging and industrial charger primary side circuits.
LED Lighting Driver: Used as a switching tube or startup tube in high-voltage constant current solutions; ample voltage margin, high reliability, supports wide voltage input applications.
High-Voltage DC-DC Converter: Suitable for buck/flyback topologies with 200V~600V input range; superjunction structure speeds up switching, reducing dead-time losses.
Motor Drive Auxiliary Circuit: Used for switching power supply auxiliary power supply in industrial inverters and servo drives; strong impact resistance, adapts to harsh grid environments.
Photovoltaic Inverter Auxiliary Power Supply: Withstands high bus voltage fluctuations; SJ_Multi-EPI process provides stable avalanche ruggedness, improving long-term system reliability.
Home Appliances and Industrial Control Boards: Acts as a high-voltage switch in high-voltage sampling, auxiliary power supply, relay drive, etc.; TO252 package facilitates automatic placement. Selection Summary: SIHD6N80AET1-GE3-VB achieves a balance between the 800V high-voltage platform, 5A current level, and TO252 package. It is a general-purpose MOSFET for medium and small power high-voltage switching applications, especially suitable for industrial and consumer projects with clear requirements for withstand voltage reliability, temperature rise performance, and cost control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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