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SIHD4N80ET1-GE3-VB Product details
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VBsemi SIHD4N80ET1-GE3-VB is a Single N-channel power field effect transistor using SJ_Multi-EPI technology, designed for high-voltage switching power supplies and industrial power conversion scenarios. Its TO252 packaging balances heat dissipation capability and installation convenience, suitable for high-density power board layouts. The device provides stable and reliable switching characteristics within the 800V drain-source voltage range. Combined with the low on-resistance and low gate charge brought by the super junction structure, it effectively reduces loss and temperature rise in high-voltage applications, improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V Typical
- On-Resistance (VGS=10V): 1100mΩ (Typical)
- Maximum Drain Current (ID): 5A
- Package Type: TO252
- Process Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V Typical
- On-Resistance (VGS=10V): 1100mΩ (Typical)
- Maximum Drain Current (ID): 5A
- Package Type: TO252
- Process Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
1. High-voltage switching power supply: Used as the main switch tube in AC-DC flyback or forward topologies, leveraging 800V withstand voltage and low conduction losses to improve the conversion efficiency of adapters, chargers, and industrial power supplies.
2. LED lighting driver: Suitable for high-voltage constant current driver circuits, achieving stable power output, meeting the needs of high-power applications such as road lighting, industrial lights, and plant lights.
3. Power Factor Correction (PFC): Used as a switching device in Boost-type PFC circuits, utilizing the superjunction low \(R_{DS(on)}\) characteristic to reduce rectification losses and improve power quality.
4. Inverter and motor drive: Used for auxiliary switches in inverter circuits with high-voltage DC bus voltage or low-power motor drives, supporting PWM speed regulation and improving operational reliability.
5. Auxiliary power supply and high-voltage DC-DC: Acts as a high-voltage side switch or startup circuit component, providing stable auxiliary power for industrial control, communication base stations, and servers.
6. Photovoltaic inverter front-end: Used in the boost stage of string or micro-inverters, achieving efficient MPPT tracking and adapting to high-voltage, high-frequency operating conditions.
7. Charging pile and electric vehicle auxiliary equipment: Used in high-voltage power distribution units or auxiliary power modules, meeting wide voltage input and long-term reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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