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2SK2631-TL-E-ON-VB Product details
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VBsemi 2SK2631-TL-E-ON-VB is a Single N-channel field effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced SJ_Multi-EPI super junction technology, featuring high breakdown voltage, low conduction loss, and excellent switching performance, suitable for high-voltage power conversion and control applications. The device uses TO252 packaging, balancing heat dissipation performance and installation convenience, suitable for power system designs with high requirements for reliability and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 2600mΩ
- Maximum Drain Current (ID): 2A
- Package Type: TO252
- Technology Type: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 2600mΩ
- Maximum Drain Current (ID): 2A
- Package Type: TO252
- Technology Type: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
1. High-voltage switching power supply: 2SK2631-TL-E-ON-VB is suitable for primary side switching circuits of AC-DC switching power supplies, such as adapters, chargers, and industrial power modules, enabling efficient and stable power conversion under 800V high-voltage bus conditions.
2. LED lighting driver: In high-voltage LED lighting driver circuits, this device can be used as a constant current control switch for high-power lighting systems such as street lights, industrial lights, and plant lights, effectively improving driver efficiency and reliability.
3. Power Factor Correction (PFC) circuit: The device features high withstand voltage and low switching losses, suitable for PFC boost stages in Continuous Conduction Mode (CCM) or Critical Conduction Mode (CRM), helping the system meet harmonic current limits.
4. Auxiliary power supply and high-voltage Bias circuit: In auxiliary power supplies for servers, communication equipment, and home appliance control boards, it can be used in flyback or buck converters to provide a stable bias voltage for the control chip.
5. Industrial control and automation: This MOSFET can be used in auxiliary power supplies and high-voltage detection circuits of industrial inverters and servo drives, adapting to harsh industrial environments with its robust avalanche tolerance and stable temperature characteristics.
6. Photovoltaic inverter: In distributed photovoltaic systems, this product is suitable for DC-DC boost circuits or inverter auxiliary power supplies, achieving safe isolation and efficient conversion on the high-voltage side.
7. Electric vehicle charger: For high-voltage side switching applications in two-wheel/three-wheel electric vehicle chargers, this device can improve the charger's voltage margin and system reliability, extending product lifespan.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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