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SIHD2N80AE-T4-GE3-VB Product details
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Still troubled by high heat generation and insufficient reliability in high-voltage switching applications? VBsemi SIHD2N80AE-T4-GE3-VB is here to help! This TO252-packaged N-MOSFET is designed for 800V high-voltage scenarios, using SJ_Multi-EPI super junction technology, with ample breakdown voltage margin and low on-resistance of 2600mΩ, delivering excellent switching and conduction loss performance. With 2A continuous drain current capability and ±30V wide drive range, it easily adapts to industrial power supplies, charging pile auxiliary power, high-voltage inverters and other applications, serving as a "strong backbone" for high-voltage system designers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 800V (High-voltage application, safe and reliable)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 2600mΩ @ 10V (Lower loss among high-voltage devices)
High Current Capability: 2A (Suitable for medium and low power high-voltage switching needs)
Package: TO252 (DPAK, suitable for medium power SMD mounting and heat dissipation)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 2600mΩ @ 10V (Lower loss among high-voltage devices)
High Current Capability: 2A (Suitable for medium and low power high-voltage switching needs)
Package: TO252 (DPAK, suitable for medium power SMD mounting and heat dissipation)
Domain and module applications：
— One Core for Six High-Voltage Scenarios
Industrial Switching Power Supply: High-voltage bus switching, auxiliary power supply, improving system efficiency and stability
Charging Pile and On-board Charger: High-voltage side power conversion, reliable withstand voltage, strong impact resistance
Photovoltaic Inverter: DC bus switching and boost circuit, aiding efficient clean energy conversion
Motor Drive Control: High-voltage inverter, industrial fan, crisp switching, EMI-friendly
LED High-Voltage Lighting: Constant current drive and linear control, stable brightness, longer lifespan
AC-DC Adapter: High-voltage startup circuit and power factor correction, simplifying peripheral design SIHD2N80AE-T4-GE3-VB — Fearless of high voltage, stable as a rock, making your power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
