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SIHD240N60E-T1-GE3-VB Product details
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VBsemi SIHD240N60E-T1-GE3-VB is a Single N-channel power field effect transistor manufactured using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, designed for high-voltage power conversion and industrial control scenarios. Its TO252 package achieves a good balance between thermal performance and PCB layout flexibility, suitable for medium to high power density applications. The device provides stable switching characteristics within a 600V drain-source voltage range, with an on-resistance of 340mΩ and a continuous drain current capability of 12A, effectively reducing conduction losses and improving overall system efficiency. Additionally, the ±30V gate drive range enhances drive compatibility, facilitating direct connection to various control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 12A | 340(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 12A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 340mΩ (Typical)
- Maximum Drain Current (ID): 12A
- Package: TO252
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 340mΩ (Typical)
- Maximum Drain Current (ID): 12A
- Package: TO252
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
1. Switching Power Supply (SMPS): Used for primary switching tubes in high-voltage DC-DC converters and AC-DC power supplies. The superjunction structure reduces switching and conduction losses, improving power conversion efficiency.
2. LED Lighting Driver: Suitable for high-voltage LED constant current driver circuits, serving as the main power switch for stable output, supporting wide voltage input, and improving lamp reliability.
3. Industrial Power Conversion: Used in power stages of photovoltaic inverters and servo drives, withstanding 600V high voltage stress, meeting industrial-grade long-life requirements.
4. Power Tool Charger: Serves as a power switch in high-voltage battery pack chargers, cooperating with PWM control to achieve efficient charging management and reduce heatsink size.
5. High-Voltage Auxiliary Power Supply: Used in auxiliary power modules for home appliance control boards, smart meters, etc., providing stable high-voltage switching capability and enhancing system surge immunity.
6. Motor Drive Control: Suitable for drivers of small three-phase brushless motors or industrial fans, utilizing high-voltage characteristics to cope with bus voltage fluctuations and supporting high-frequency PWM speed regulation.
7. Uninterruptible Power Supply (UPS): Applied in inverter or PFC circuits to achieve efficient power conversion and ensure continuous power supply for critical loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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