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SIHD7N60ET1-GE3-VB Product details
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Imagine: You are designing an industrial-grade switching power supply, facing a 600V high-voltage bus, but needing to balance efficiency and reliability. Ordinary MOS transistors either lack sufficient voltage resistance or have high conduction loss. VBsemi SIHD7N60ET1-GE3-VB is born for this—it is based on advanced SJ_Multi-EPI superjunction technology, perfectly integrating 600V voltage resistance, 7A continuous current carrying capacity, and 650mΩ on-resistance into a TO252 package, making high-voltage power supply design effortless.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 7A | 650(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Withstand Voltage 600V, easily handles high-voltage applications with ample safety margin
Gate Drive Range ±30V, compatible with various drive circuits, strong anti-interference capability
Threshold Voltage 3.5V, typical value, stable and reliable switching characteristics
On-Resistance 650mΩ (at 10V drive), super junction process significantly reduces losses
Maximum Current 7A, achieves efficient thermal management in TO252 package
Gate Drive Range ±30V, compatible with various drive circuits, strong anti-interference capability
Threshold Voltage 3.5V, typical value, stable and reliable switching characteristics
On-Resistance 650mΩ (at 10V drive), super junction process significantly reduces losses
Maximum Current 7A, achieves efficient thermal management in TO252 package
Domain and module applications：
Switching Power Supply / Adapter – As a high voltage power switch tube, effectively reduces conduction and switching losses, improving overall efficiency.
LED Lighting Driver – Used in PFC or flyback topologies, stable and reliable, extending power supply life.
Industrial Control and Automation – Provides solid and reliable power switching in high voltage bus scenarios, adapting to harsh grid environments.
Photovoltaic Inverter / Micro Inverter – Excellent voltage withstand and low on-resistance characteristics help clean energy efficient conversion.
Electric Vehicle Charger / Onboard Power Supply – Withstands high voltage surges, ensuring stable output of the power module under high load.
Auxiliary Power Supply / AC-DC Secondary Circuit – Exhibits excellent performance in high voltage side switching circuits, simplifying thermal design. One sentence summary: SIHD7N60ET1-GE3-VB is not an ordinary MOS tube; it is your 'reliable cornerstone' and 'efficiency engine' for high voltage power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
