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TK5P60W,RVQ-VB Product details
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Still worried about high loss and insufficient reliability in high-voltage switching power supplies? VBsemi TK5P60W,RVQ-VB is here to help! This TO252 packaged N-MOS transistor, using superjunction Multi-EPI technology, handles 600V voltage resistance with ease, provides stable output with 5A continuous current capability, and has an on-resistance of only 850mΩ, significantly reducing conduction loss compared to similar ordinary planar process devices. The SJ_Multi-EPI process brings faster switching speed and lower gate charge, taking high-voltage conversion efficiency to the next level, making it a high-voltage 'efficiency weapon' for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 5A | 850(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 600V (Sufficient margin for high-voltage systems, safe and reliable)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, simple and easy to use)
On-Resistance: 850mΩ @ 10V (Low conduction loss, less heat generation)
Current Capability: 5A (Single device output, stable and reliable)
Package: TO252 (DPAK, suitable for high power density surface mounting)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, fast switching, low loss)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, simple and easy to use)
On-Resistance: 850mΩ @ 10V (Low conduction loss, less heat generation)
Current Capability: 5A (Single device output, stable and reliable)
Package: TO252 (DPAK, suitable for high power density surface mounting)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial process, fast switching, low loss)
Domain and module applications：
– Six Hot Scenarios, One Solution
Switching Power Supply: High Voltage DC-DC, Flyback Main Switch, More Obvious Efficiency Improvement
LED Lighting Driver: Constant Current Solution for Industrial and Street Lights, Stable, Durable, No Flicker
Adapter and Charger: Phone Fast Charging, Laptop Power Supply, More Convenient High Voltage Conversion
Industrial Auxiliary Power Supply: Servo Drive, Inverter Auxiliary Power Supply, Strong Impact Resistance
Photovoltaic Inverter: Boost Stage MOSFET, Helping New Energy Efficient Power Generation
High Voltage Battery Management: Energy Storage System Protection Circuit, Fast Fault Current Cut-off TK5P60W,RVQ-VB – High Voltage, Low Consumption, Stable and Reliable, Making Your Power Supply Design More Competitive!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
