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TK2P60D(TE16L1,NQ)-VB Product details

Product introduction:

TK2P60D is an N-channel MOS transistor for high-voltage, low-current applications, in a TO252 package, with 600V withstand voltage and 2A current carrying capacity. Using planar technology design, the on-resistance is stable and reliable, suitable for switching power supplies, auxiliary power supplies, and high-voltage drive circuits. The gate drive range is as wide as ±30V, adaptable to various control schemes, with strong anti-interference capability, making system design more flexible.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 600V 3.5V 2A 3695(mΩ) 3560(mΩ) Planar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 600V 3.5V 2A Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 600V 3.5V 2A Planar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Breakdown Voltage: 600V
Gate Drive Voltage: ±30V
Threshold Voltage: 3.5V
On-Resistance (VGS=10V): 3560mΩ
Maximum Current: 2A
Package: TO252
Technology: Planar

Domain and module applications:


AC-DC Auxiliary Power Supply → High withstand voltage, strong reliability
LED Lighting Driver → High-voltage constant current control, safe and efficient
Industrial Control Circuit → Wide drive range, strong adaptability
Small Appliance Power Module → Compact size, good heat dissipation
Charger High-Voltage Side → Crisp switching action, good surge resistance
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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