中文
English
SIHD186N60EFT1-GE3-VB Product details
Back to previous pageProduct introduction：
SIHD186N60EFT1-GE3-VB is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios, using SJ_Multi-EPI super-junction technology to balance low conduction losses with high switching speed. The TO252 package achieves a good balance between heat dissipation capability and mounting volume. The combination of 650V withstand voltage, 20A current capability, and 160mΩ on-resistance makes it a reliable choice for applications such as server power supplies, charging station modules, and industrial drives, especially for projects with strict requirements for high-voltage margin and thermal performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VDS=650V: Suitable for three-phase 380V rectification and PFC boost topologies, meeting high-voltage bus spike and surge withstand requirements, significantly reducing avalanche failure risk.
VGS=±30V: Wide gate drive voltage window, compatible with 10V~15V standard gate drive circuits, high tolerance to drive overshoot, improving system robustness.
Vth=3.5V (typical): Moderate turn-on threshold, effectively suppresses dv/dt-induced false turn-on, ensuring stable switching behavior in strong interference environments.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance achieved through super junction technology, significantly reducing conduction loss at full load, beneficial for improving power conversion efficiency and simplifying thermal design.
ID=20A: Ample continuous current margin, covering peak current requirements of most high-voltage DC-DC converters, inverters, and PFC circuits.
Package TO252: DPAK package with low thermal resistance and mature soldering process, balancing power dissipation and PCB layout flexibility, suitable for automated high-volume production.
VGS=±30V: Wide gate drive voltage window, compatible with 10V~15V standard gate drive circuits, high tolerance to drive overshoot, improving system robustness.
Vth=3.5V (typical): Moderate turn-on threshold, effectively suppresses dv/dt-induced false turn-on, ensuring stable switching behavior in strong interference environments.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance achieved through super junction technology, significantly reducing conduction loss at full load, beneficial for improving power conversion efficiency and simplifying thermal design.
ID=20A: Ample continuous current margin, covering peak current requirements of most high-voltage DC-DC converters, inverters, and PFC circuits.
Package TO252: DPAK package with low thermal resistance and mature soldering process, balancing power dissipation and PCB layout flexibility, suitable for automated high-volume production.
Domain and module applications：
Switching Power Supply PFC Circuit: High-voltage superjunction structure reduces conduction and switching losses, helping to improve PFC stage efficiency and reduce heatsink size.
Server/Telecom Power Supply: 650V withstand voltage combined with low RDS(on) meets the design requirements of high-efficiency, high-density power modules, supporting a wide input voltage range.
Photovoltaic Inverter: High withstand voltage and strong surge capability adapt to DC bus voltage fluctuation scenarios, improving long-term system operational reliability.
EV Charger: 20A current capability covers common charging power levels, low losses extend product lifespan, TO252 package facilitates structural layout.
Industrial Motor Drive: Built-in fast body diode provides good freewheeling characteristics, suitable for high-frequency PWM control, reducing inverter bridge temperature rise.
Lighting Power Supply (HID/LED High-Voltage Driver): High voltage margin simplifies surge protection design, low conduction voltage drop improves constant current source efficiency.
Home Appliance Variable Frequency Controller: SJ_Multi-EPI technology provides excellent switching performance, suitable for power stage design in inverter modules for air conditioners, refrigerators, etc. Selection Summary: The SIHD186N60EFT1-GE3-VB achieves an excellent balance between high-voltage withstand, conduction losses, and package practicality. It is a cost-effective, general-purpose choice for 650V high-voltage switching applications, especially suitable for power electronics projects with clear requirements for efficiency, thermal dissipation, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
