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SIHD180N60ET4-GE3-VB Product details
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VBsemi SIHD180N60ET4-GE3-VB is a Single N-channel power MOSFET using SJ_Multi-EPI (super-junction multi-epitaxial) technology, designed for high-voltage power conversion and industrial-grade energy efficiency scenarios. Its TO252 package strikes a good balance between thermal performance and mounting density, making it suitable for medium-to-high power density AC-DC, DC-DC, and inverter systems. The device provides stable, low-loss switching characteristics within a 650V drain-source voltage range, with a wide gate drive voltage range of ±30V, facilitating compatibility with various drive schemes and enhancing system reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (typical)
- On-Resistance (VGS=10V): 160mΩ (typical)
- Maximum Drain Current (ID): 20A
- Package: TO252
- Configuration: Single-N
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (typical)
- On-Resistance (VGS=10V): 160mΩ (typical)
- Maximum Drain Current (ID): 20A
- Package: TO252
- Configuration: Single-N
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Domain and module applications：
1. Switching Power Supply (SMPS): Used as an efficient AC-DC main switch, leveraging superjunction structure to reduce conduction and switching losses, improving overall conversion efficiency.
2. Photovoltaic Inverters and Energy Storage Systems: Enables power conversion and on/off control on the high-voltage DC bus side, suitable for string inverters and battery charge/discharge modules.
3. Industrial Auxiliary Power Supply: Provides stable high-voltage power for servo drives, PLCs, variable frequency drives, etc., meeting wide input voltage and high robustness requirements.
4. EV Chargers and On-Board Chargers (OBC): Used in high-voltage DC-DC cascade circuits, leveraging low on-resistance and high withstand voltage to reduce thermal buildup.
5. Power Factor Correction (PFC) Circuit: Operates in high-frequency continuous conduction mode, reducing losses and improving harmonics, suitable for power modules above 300W.
6. Motor Drive and High-Voltage Load Switch: Drives industrial fans, pumps, and three-phase asynchronous motors, supporting PWM speed control and soft start, enhancing system safety.
7. High-Power LED Lighting Driver: Used in high-voltage constant current drive circuits, providing stable output current, suppressing ripple, and improving long-term operational reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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