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SIHD180N60ET1-GE3-VB Product details
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Imagine: You are designing a high-voltage, high-power power supply that must withstand a 650V bus voltage while maintaining efficient operation at 20A. Ordinary MOSFETs either lack sufficient voltage tolerance or suffer from high conduction losses. VBsemi SIHD180N60ET1-GE3-VB is designed for this—it integrates 650V withstand voltage, 20A current capability, and an on-resistance of only 160mΩ into a TO252 package, combined with super-junction multi-epitaxial (SJ_Multi-EPI) technology, allowing high-voltage power supply designs to achieve a perfect balance between performance and cost.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Drain-Source Voltage: 650V, easily handles high-voltage bus fluctuations
Gate Drive Range: ±30V, compatible with common drive circuits
Threshold Voltage: 3.5V, clear and reliable switching characteristics
On-Resistance: 160mΩ (at 10V drive), maintains low loss at high voltage
Maximum Current: 20A, delivers high power even in TO252 package
Super Junction Multi-Epitaxy Technology – Optimizes on-resistance and switching speed, improving system efficiency
Domain and module applications：
Industrial Switching Power Supply – As a high-voltage main switch, effectively reduces conduction losses and improves overall efficiency.
Photovoltaic Inverter – In DC-DC boost or inverter bridge circuits, with 650V withstand voltage and low on-resistance, stably converts every watt of energy.
Electric Vehicle Charging Station – Used in auxiliary power supplies or PFC stages, withstands high-voltage surges, ensuring long-term reliable operation.
Motor Drive Control – In high-voltage BLDC or variable frequency drives, achieves efficient power switching and reduces heat generation.
Server/Telecom Power Supply – Adapts to high-voltage input, combined with synchronous rectification topology, improves power density.
LED Lighting Driver (High Voltage Series) – Provides stable high-voltage switching capability, enabling more precise constant current control.
Battery Energy Storage System (BMS High-Voltage Side) – Reliably disconnects the high-voltage circuit, protecting the battery pack from abnormal surges. One-sentence summary: The SIHD180N60ET1-GE3-VB is not an ordinary MOSFET; it is the "voltage withstand guardian" and "efficiency engine" in your high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
