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SIHD240N65E-GE3-VB Product details
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Still troubled by conduction losses and heat dissipation issues in high-voltage switching power supplies? Let VBsemi SIHD240N65E-GE3-VB solve your worries! This TO252-packaged N-MOSFET, using SJ_Multi-EPI super-junction technology, offers 650V withstand voltage and 16A high current capability, with an on-resistance of only 230mΩ, enabling excellent energy efficiency in high-voltage systems. Whether in switching power supplies, PFC circuits, or high-voltage inverters, it delivers stable performance and reliable thermal control, making it the high-voltage "energy-saving champion" for engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 16A | 230(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 16A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 16A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 650V (Sufficient safety margin for high-voltage applications)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 230mΩ @ 10V (Low conduction losses, controllable heat generation)
High Current Capability: 16A (High power density in TO252 package)
Package: TO252 (Suitable for automated placement, short thermal path)
Technology: SJ_Multi-EPI Superjunction Process (Combining low on-resistance and low switching losses)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 230mΩ @ 10V (Low conduction losses, controllable heat generation)
High Current Capability: 16A (High power density in TO252 package)
Package: TO252 (Suitable for automated placement, short thermal path)
Technology: SJ_Multi-EPI Superjunction Process (Combining low on-resistance and low switching losses)
Domain and module applications：
– Six High-Voltage Scenarios, One MOSFET Handles All
Switching Power Supply: Efficient AC-DC main switch, improving overall efficiency
PFC Power Factor Correction: High voltage withstand, low losses, aids harmonic mitigation
LED Driver Power Supply: Stable constant current control, more comfortable with wide voltage input
Photovoltaic Inverter: Reliable DC-AC conversion, handles high-voltage bus
Industrial Auxiliary Power Supply: Impact resistant, high voltage withstand, provides stable power for control systems
Charging Station Module: Low high-frequency switching losses, supports efficient operation of high-power charging equipment. SIHD240N65E-GE3-VB – High voltage, low resistance, rock solid, making your power supply design more efficient and secure!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
