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MDTU380N65H-TP-VB Product details
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Still troubled by high losses and heat dissipation challenges in high-voltage switching power supplies? Let VBsemi MDTU380N65H-TP-VB solve your worries! This TO252-packaged N-MOSFET, designed for 650V high-voltage applications, offers 9A continuous current capability and an on-resistance as low as 500mΩ, paired with SJ_Multi-EPI super-junction multi-layer epitaxial technology to optimize both switching and conduction losses. With a wide drive range and robust voltage margin, it is a "high-voltage efficiency tool" for engineers in industrial and power supply fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 650V (Sufficient margin for high-voltage applications, safe and reliable)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 500mΩ @ 10V (Low conduction losses, reduced heat generation)
Current Capability: 9A (High-voltage, high-current output in TO252 package)
Technology Platform: SJ_Multi-EPI (Superjunction Multi-Layer Epitaxy, optimizing the balance between voltage rating and on-resistance)
Package: TO252 (Suitable for power board mounting, short thermal path)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 500mΩ @ 10V (Low conduction losses, reduced heat generation)
Current Capability: 9A (High-voltage, high-current output in TO252 package)
Technology Platform: SJ_Multi-EPI (Superjunction Multi-Layer Epitaxy, optimizing the balance between voltage rating and on-resistance)
Package: TO252 (Suitable for power board mounting, short thermal path)
Domain and module applications：
– Six Popular Scenarios, One Solution
Switching Power Supplies: High-voltage DC-DC, AC-DC power stages, improving overall efficiency
LED Lighting Drivers: High-power constant current power supplies, stable and reliable, lower temperature rise
Adapters and Chargers: High-performance flyback/resonant solutions, enabling miniaturized design
Industrial Control Power Supplies: Wide voltage input, impact resistance, adapting to harsh environments
Photovoltaic Inverter Auxiliary Power Supplies: Power drawn from high-voltage bus, low loss, fast response
Motor Drives and Inverters: Built-in super junction technology, excellent high-frequency switching performance
MDTU380N65H-TP-VB – High-voltage super junction, low loss and high efficiency, making your power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
