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SPD07N60C3BTMA1-VB Product details
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Still troubled by high switching losses and difficult heat dissipation in high-voltage applications? Let VBsemi SPD07N60C3BTMA1-VB solve your worries! This TO252-packaged N-MOSFET, using SJ_Multi-EPI super-junction multi-level epitaxial technology, boasts a withstand voltage of up to 650V and an on-resistance of only 700mΩ, maintaining excellent efficiency in high-voltage scenarios. With a 7A continuous current capability and low conduction losses, it makes power supply design more worry-free and reliable, serving as an "energy-saving weapon" for high-voltage power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 650V (Ample margin for high-voltage applications, safe and stable)
Drive Range: ±30V (Compatible with multiple drive solutions, flexible adaptation)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 700mΩ @ 10V (Low losses for high-voltage device, less heat generation)
Current Capability: 7A (Robust output in TO252 package)
Process Technology: SJ_Multi-EPI (Superjunction structure, optimized switching and conduction losses)
Package: TO252 (Suitable for applications requiring high power density)
Drive Range: ±30V (Compatible with multiple drive solutions, flexible adaptation)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 700mΩ @ 10V (Low losses for high-voltage device, less heat generation)
Current Capability: 7A (Robust output in TO252 package)
Process Technology: SJ_Multi-EPI (Superjunction structure, optimized switching and conduction losses)
Package: TO252 (Suitable for applications requiring high power density)
Domain and module applications：
– Six High-Voltage Scenarios, One Core Solution
Switching Power Supplies: Efficient AC-DC conversion, reducing overall temperature rise, improving energy efficiency levels
LED Lighting Drivers: High-voltage constant current solution, stable and reliable, flicker-free
Adapters and Chargers: Wide voltage input, low loss, enabling miniaturized design
Industrial Control Power Supplies: High voltage withstand, impact resistance, adapting to harsh industrial environments
Photovoltaic Inverter Auxiliary Power Supplies: Power drawn from high-voltage bus, efficient and stable, extending system lifespan
Electric Vehicle Chargers: High voltage withstand ensures safety, low internal resistance reduces heat generation, more efficient charging
SPD07N60C3BTMA1-VB – High voltage withstand, low loss, making your high-voltage power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
