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MCU655N65FH-TP-VB Product details
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Still struggling with high losses and insufficient reliability in high-voltage switching power supplies? Let VBsemi MCU655N65FH-TP-VB solve your worries! This TO252-packaged N-MOSFET, using SJ_Multi-EPI super-junction multi-epitaxial technology, handles high-voltage applications with ease at 650V withstand voltage, delivers stable output with 7A continuous current capability, and features a typical on-resistance of 700mΩ, achieving an excellent balance between switching loss and conduction loss. Whether in AC-DC primary side or high-voltage auxiliary power supplies, it becomes a "reliable choice" for high-voltage engineers with its robust avalanche tolerance and low heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 650V (Sufficient margin for high-voltage systems, safe and stable)
Drive Range: ±30V (Compatible with wide drive range, strong adaptability)
Threshold Voltage: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 700mΩ @ 10V (Low conduction losses, controllable heat generation)
Current Capability: 7A @ 25°C (High power density in TO252 package)
Technology Platform: SJ_Multi-EPI (Superjunction Multi-Epitaxial process, excellent figure of merit)
Package: TO252 (Suitable for automated placement, good thermal performance)
Drive Range: ±30V (Compatible with wide drive range, strong adaptability)
Threshold Voltage: 3.5V (Effectively driven by standard logic levels)
On-Resistance: 700mΩ @ 10V (Low conduction losses, controllable heat generation)
Current Capability: 7A @ 25°C (High power density in TO252 package)
Technology Platform: SJ_Multi-EPI (Superjunction Multi-Epitaxial process, excellent figure of merit)
Package: TO252 (Suitable for automated placement, good thermal performance)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supplies: Primary side switch for adapters and chargers, improving overall efficiency
LED Driver Power Supplies: High-voltage constant current and constant voltage control, stable and reliable, extending lifespan
Industrial Auxiliary Power Supplies: High-voltage power supply for inverters and servo drives, strong surge immunity
Charging Pile Power Modules: Efficient AC-DC conversion, enabling high power miniaturization
Photovoltaic Inverter Auxiliary Power Supplies: Power drawn from high-voltage bus, ample voltage margin, safe and reliable
White Goods and Home Appliance Control Boards: High-voltage power supply for air conditioners, refrigerators, washing machines, durable and long-lasting
MCU655N65FH-TP-VB – High-voltage super junction platform, rock-solid stability, making your power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
