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TK40S06N1L,LQ-VB Product details

Product introduction:

The TK40S06N1L,LQ-VB is a Single N-MOS optimized for medium-to-low voltage, high-current power switching applications. Using Trench technology, it combines ultra-low on-resistance with fast switching capability, and the TO252 package strikes a good balance between heat dissipation performance and assembly convenience. The combination of 60V withstand voltage, 97A current capability, and 4.5mΩ on-resistance makes it a preferred device for applications such as high-power-density power supplies, motor drives, and battery protection, especially suitable for designs looking to replace traditional DPAK packages and improve system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 3V 97A 12(mΩ) 4.5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 3V 97A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 3V 97A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N

VDS=60V: Suitable for 12V/24V/48V systems, providing ample margin for voltage spikes and significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with 5V~12V logic levels, can directly connect to MCU/PMIC, simplifying drive circuit design.
Vth=3V (Typical): Moderate threshold voltage effectively suppresses false turn-on while ensuring full conduction under 10V drive.
RDS(on)=4.5mΩ @ VGS=10V: Extremely low on-resistance significantly reduces temperature rise under full load, allowing for smaller heatsinks or copper areas.
RDS(on)=12mΩ @ VGS=4.5V: Maintains good conduction characteristics under low-voltage drive conditions, suitable for a wide drive voltage range.
ID=97A: Ample continuous current margin to handle surge current demands of high-power loads.
Package TO252: Low thermal resistance, high current capability, suitable for medium power density PCB layout, compatible with mainstream SMT processes.

Domain and module applications:


Motor Drives and Power Tools: Ultra-low internal resistance reduces winding loop losses, excellent PWM switching characteristics, significantly lower controller temperature rise.
DC-DC Converters and Synchronous Rectification: Replaces Schottky diodes, can improve heavy-load efficiency by 2~3%, aiding power module miniaturization.
Battery Protection and BMS: Milliohm-level on-resistance reduces protection board self-heating, fast response characteristics ensure reliable shutdown during overcurrent/short circuit.
Automotive Auxiliary Power and Body Control: 60V voltage margin adapts to 12V/24V vehicle bus, wide safe operating area enhances system reliability.
Server and Communication Power Supplies: High current carrying capacity combined with low loss, meeting the stringent requirements of high-density power conversion for devices.
Electric Bicycles and Drones: Lightweight TO252 package paired with 97A continuous current, providing stable support for high-power-density powertrain systems.Summary: TK40S06N1L,LQ-VB achieves an excellent balance between voltage rating, on-resistance, current capability, and package form. It is a high-performance general-purpose MOSFET for 60V medium-low voltage high-power switching applications, especially suitable for projects with strict requirements on efficiency, heat dissipation, and overcurrent capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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