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SIHD12N50E-T1-GE3-VB Product details
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VBsemi SIHD12N50E-T1-GE3-VB is a Single N-channel field-effect transistor using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, designed for high-voltage power conversion and high-efficiency power systems. Its TO252 package balances heat dissipation with soldering convenience, suitable for high-density layout scenarios such as adapters, chargers, and industrial power supplies. The device provides stable switching characteristics within a 500V drain-source voltage range, with a wide gate drive voltage range of ±30V, combined with low on-resistance and fast switching capability, significantly reducing system losses and improving overall efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 10A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Drain-Source Voltage (VDS): 500V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 380mΩ (Typical)
- Maximum Drain Current (ID): 10A
- Package: TO252
- Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (Typical)
- On-Resistance (VGS=10V): 380mΩ (Typical)
- Maximum Drain Current (ID): 10A
- Package: TO252
- Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxy)
Domain and module applications：
1. Switching Power Supply: Used as the main switch in AC-DC converters, leveraging high voltage tolerance and low on-resistance to improve conversion efficiency, suitable for adapters, chargers, and industrial power supplies.
2. LED Lighting Driver: Applied in high-voltage constant current drive circuits, achieving stable output current and reducing switching losses, meeting high-power LED lighting needs.
3. Power Factor Correction (PFC): Acts as the main switch in Boost PFC circuits, optimizing high-frequency switching performance, improving power factor and system efficiency.
4. Inverter and UPS: Used for high-voltage side switching in uninterruptible power supplies and inverters, ensuring stable and reliable power conversion, suitable for medium and low-power energy storage systems.
5. High-Voltage DC-DC Converter: Applied in auxiliary power supplies for high-voltage buses in photovoltaic inverters, EV charging piles, etc., achieving efficient voltage conversion and isolated power supply.
6. Industrial Control Equipment: Integrated into motor drives, solenoid valve control, and various industrial power modules, providing a robust high-voltage switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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