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TK10P50W,RQ-VB Product details
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Troubled by high switching losses and heat dissipation challenges in high-voltage applications? VBsemi TK10P50W,RQ-VB is here to help! This TO252-packaged N-MOS tube uses SJ_Multi-EPI Super Junction technology, with a voltage tolerance of up to 500V, stable output current of 7A, and a low on-resistance of 550mΩ, optimizing both switching and conduction losses. Whether for switching power supply primary sides, LED drivers, or industrial auxiliary power, it delivers excellent reliability to support efficient design, serving as a 'efficiency cornerstone' for high-voltage engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | 550(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage Rating: 500V (Ample margin for high-voltage applications, safe and reliable)
Drive Range: ±30V (Compatible with multiple gate drive schemes)
Threshold Voltage: 3.5V (Stable triggering at standard logic levels)
On-Resistance: 550mΩ @ 10V (Effectively reduces conduction losses)
High Current Capability: 7A (TO252 package balances power density and heat dissipation)
Package: TO252 (DPAK, suitable for automated assembly and PCB layout)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxy, optimizes conduction and switching performance)
Drive Range: ±30V (Compatible with multiple gate drive schemes)
Threshold Voltage: 3.5V (Stable triggering at standard logic levels)
On-Resistance: 550mΩ @ 10V (Effectively reduces conduction losses)
High Current Capability: 7A (TO252 package balances power density and heat dissipation)
Package: TO252 (DPAK, suitable for automated assembly and PCB layout)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxy, optimizes conduction and switching performance)
Domain and module applications：
– Six Typical Scenarios, One Chip Covers All
Switching Power Supply: High-voltage DC-DC, flyback/forward topology main switch, improved efficiency and reliability
LED Driver Power Supply: Constant current control and high-voltage bus switching, stable and durable
Adapter and Charger: Wide voltage input, strong surge resistance, enabling compact design
Industrial Control Auxiliary Power Supply: High reliability, adapts to harsh grid environments
Photovoltaic Inverter: Boost stage power conversion, leveraging high-voltage and low-resistance advantages
Electric Vehicle Charger: High-voltage side switch, ensuring charging safety and efficiency TK10P50W,RQ-VB – High voltage, low resistance, robust and reliable, making your power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
