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TK10S04K3L(T6L1,NQ-VB Product details

Product introduction:

The TK10S04K3L is a high-current, low-loss N-channel MOSFET in a TO252 package, with a 40V drain-source voltage and 55A continuous drain current. Using Trench technology, its on-resistance is as low as 12mΩ (at VGS=10V), ensuring low heat generation and high efficiency, ideal for high-current power conversion applications. The gate drive is flexible, with a wide ±20V range, compatible with various control circuits for reliable and durable operation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 55A 14(mΩ) 12(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Voltage: 40V
Drive Voltage: ±20V
Threshold Voltage: 2.5V
On-Resistance (4.5V Drive): 14 mΩ
On-Resistance (10V Drive): 12 mΩ
Max Current: 55A
Package: TO252
Technology: Trench

Domain and module applications:


DC-DC Converter → Synchronous rectification for higher efficiency
Motor Drive → High current output, fast response
Battery Charge/Discharge Protection → Low loss, safe and reliable
Power Adapter → Sufficient voltage tolerance, stable power supply
Power Tools → Impact resistant, good heat dissipation
On-board Electronics → Wide drive range, strong adaptability
Solar Inverter → Low on-resistance, reduces power loss
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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