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TK65S04N1L,LXHQ-VB Product details

Product introduction:

The TK65S04N1L is a high-current, low on-resistance N-channel MOSFET in a TO252 package, with a 40V drain-source voltage and 85A continuous drain current. Leveraging Trench technology, its on-resistance is as low as 5mΩ (at VGS=10V), ensuring low power loss and heat generation, suitable for high power density applications. The gate drive is compatible with 4.5V logic levels and has a wide ±20V range for greater application flexibility.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 6(mΩ) 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Voltage Rating: 40V
Drive Voltage: ±20V
Threshold Voltage: 2.5V
On-Resistance (4.5V Drive): 6 mΩ
On-Resistance (10V Drive): 5 mΩ
Maximum Current: 85A
Package: TO252

Domain and module applications:


DC-DC Converter → Synchronous rectification for higher efficiency
Motor Drive and Controller → High current output, fast response
Lithium Battery Protection Circuit → Reliable switching, extends battery life
UPS and Power Module → Low loss, stable power supply
On-board Electronics → Impact resistant, high temperature tolerant, adapts to harsh environments
Power Tools and Industrial Equipment → High-power drive, robust and durable
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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