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TK65S04K3L(T6L1,NQ-VB Product details

Product introduction:

The TK65S04K3L is a high-current, low-loss N-channel MOSFET in a TO252 package, with a 40V drain-source voltage and 85A continuous drain current. Leveraging Trench technology, its on-resistance is as low as 5mΩ (at VGS=10V), ensuring low heat generation and high efficiency. The gate drive is flexible, with a wide ±20V range, making it suitable for various low-voltage, high-current control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 6(mΩ) 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Voltage Rating: 40V
Drive Voltage: ±20V
Threshold Voltage: 2.5V
On-Resistance: 6mΩ (4.5V Drive), 5mΩ (10V Drive)
Maximum Current: 85A
Package: TO252
Technology: Trench

Domain and module applications:


Motor Drive → High current output, strong power
DC-DC Conversion → Synchronous rectification for better efficiency
Battery Charge/Discharge Protection → Fast cutoff, safe and reliable
Power Switch → Low on-resistance, reduces heat generation
Power Tools → Impact resistant, adapts to high loads
On-board Electronics → Wide temperature stability, strong vibration resistance
UPS Uninterruptible Power Supply → High reliability, continuous power supply
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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