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RD3G04BBKHRBTL-VB Product details
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Imagine this: you are designing a high-power-density DC-DC converter, where the PCB must accommodate high-current loops while controlling temperature rise and losses. Ordinary MOSFETs either have high on-resistance or large packages that limit heat dissipation. VBsemi RD3G04BBKHRBTL-VB is designed for this—it integrates 40V withstand voltage, 85A high-current capability, and an ultra-low on-resistance of just 5mΩ into a standard TO252 (DPAK) package, allowing high-power power supply designs to balance efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- Voltage rating 40V, covers 12V/24V mainstream power systems, with sufficient safety margin
- Gate drive range ±20V, compatible with various PWM drive levels
- Threshold voltage 2.5V, clear switching characteristics, strong anti-interference capability
- On-Resistance 5mΩ (10V drive) / 6mΩ (4.5V drive), extremely low conduction loss
- Maximum current 85A, impressive power output even in TO252 package
- Trench process, excellent figure of merit (RDS×Q), suitable for high-frequency switching
- Gate drive range ±20V, compatible with various PWM drive levels
- Threshold voltage 2.5V, clear switching characteristics, strong anti-interference capability
- On-Resistance 5mΩ (10V drive) / 6mΩ (4.5V drive), extremely low conduction loss
- Maximum current 85A, impressive power output even in TO252 package
- Trench process, excellent figure of merit (RDS×Q), suitable for high-frequency switching
Domain and module applications：
- High-Power DC-DC Buck/Boost Modules – Synchronous rectification main switch, replacing traditional Schottky diodes, improving efficiency by 2~3%.
- Lithium Battery Protection Boards / Power Tools – 85A high current capability, combined with microsecond shutdown, ensures battery pack safety.
- Motor Drive (Drones/Robots/E-bikes) – Low on-resistance reduces MOS tube temperature rise, providing stable continuous power.
- Automotive Power / Automotive Electronics – 40V withstand voltage compatible with 12V/24V electrical systems, tolerates load dump transient shocks.
- Server Power / Communication Base Station Power – High efficiency, low loss, aiding high-power-density power module design.
- Fast Charging Adapters (PD 65W+ / 100W+) – Used as rectifier or switching stage device, reducing heat generation, improving charging speed and reliability.
- Industrial Control / Inverters – TO252 package is easy to dissipate heat, suitable for PCB mounting, simplifying the production process. In a nutshell: The RD3G04BBKHRBTL-VB is not an ordinary MOS tube; it is the 'power heart' and 'heat dissipation savior' for your high-current, high-efficiency power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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