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TK80S04K3L(T6L1,NQ-VB Product details
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Imagine: You are designing a high-power DC-DC converter or motor drive module, where the PCB needs to simultaneously handle high current throughput and heat dissipation efficiency. Ordinary MOS tubes either have high conduction losses or limited package area. The VBsemi TK80S04K3L is designed for this—it integrates 40V withstand voltage, 120A continuous current capability, and an ultra-low on-resistance of only 1.6mΩ into the TO252 package, making high-current power system design easy and efficient.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 3(mΩ) | 1.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage rating 40V, suitable for low-voltage high-current applications
Gate drive range ±20V, compatible with various drive circuits
Threshold voltage 3V, clear switching characteristics, strong anti-interference capability
On-Resistance 1.6mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
Maximum current 120A, ultra-high current carrying capacity even in TO252 package
Trench process, excellent figure of merit, superior switching performance
Gate drive range ±20V, compatible with various drive circuits
Threshold voltage 3V, clear switching characteristics, strong anti-interference capability
On-Resistance 1.6mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
Maximum current 120A, ultra-high current carrying capacity even in TO252 package
Trench process, excellent figure of merit, superior switching performance
Domain and module applications：
DC-DC Buck/Boost Modules – As a synchronous rectifier or main switch, significantly improving conversion efficiency and reducing temperature rise.
Motor Drive Control – Supports high current transient impacts, suitable for power scenarios like power tools, drones, and robots.
Lithium Battery Protection Boards – Quickly shuts off during overcurrent or short circuit, reliably protecting battery cells, suitable for high-rate discharge applications.
Vehicle Power Systems – Withstands automotive voltage fluctuations, providing a stable power path for lights, ECUs, sensors, etc.
Server/Communication Power Supplies – Low-voltage, high-current bus switching, reducing on-state losses, improving power module power density.
Electric Bicycles/Self-Balancing Scooters – Leverages ultra-low internal resistance and strong current-carrying capacity to enhance drive controller reliability.
Battery Formation/Testing Equipment – High current precise control, reducing equipment's own energy consumption, improving test efficiency. In a nutshell: The TK80S04K3L is not an ordinary MOS transistor; it is the "conduction artifact" and "power consumption nemesis" for your high-current, low-voltage designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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