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MCU90N04Y-TP-VB Product details

Product introduction:

MCU90N04Y-TP-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching applications. Using Trench technology, it offers extremely low on-resistance and excellent switching characteristics. The TO252 package strikes a good balance between heat dissipation and ease of installation. The combination of 40V voltage rating, 120A continuous current capability, and 1.6mΩ ultra-low on-resistance makes it an ideal choice for high-current-density power paths, battery protection, and motor drives, especially for projects looking to replace multiple paralleled MOSFETs or improve system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 3V 120A 3(mΩ) 1.6(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
VDS=40V: Suitable for 5V/12V/24V systems, providing sufficient voltage spike margin, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, simplifying drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, balancing noise immunity and low-voltage drive compatibility; with 4.5V or higher drive, it enters the fully enhanced region stably.
RDS(on)=1.6mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load loss, significantly reducing temperature rise and heatsink requirements.
RDS(on)=3mΩ @ VGS=4.5V: Maintains very low on-resistance even under low-voltage drive, suitable for 5V logic direct drive scenarios.
ID=120A: Ample continuous current margin, capable of withstanding high current surges, suitable for high-power loads and battery circuits.
Package TO252: Mature surface-mount package, better thermal performance than smaller packages, easy for automated production, balancing power density and reliability.

Domain and module applications:


Low-Voltage High-Current Power Systems: Extremely low on-resistance reduces conduction losses, improving DC-DC converter and synchronous rectifier efficiency.
Battery Protection Modules: 120A high current capability combined with fast switching characteristics ensures reliable protection during overcurrent/short circuits and reduces self-heating of the protection board.
Motor Drive Control: Milliohm-level on-resistance reduces PWM switching losses, supporting smooth operation of high-power motors with significantly reduced controller temperature rise.
Automotive Auxiliary Load Switches: 40V voltage margin combined with TO252 package, suitable for 12V/24V vehicle buses, ideal for loads like power windows, fans, and pumps.
Power Tools and Industrial Control: High current density design meets the instantaneous high current demands of power tools, compact package aids in miniaturized structural design.
Energy Storage and Inverters: Low loss characteristics improve charging/discharging efficiency, suitable for battery clusters, telecom power supplies, and other applications with strict requirements for high current and high reliability.
Server and Telecom Power Supplies: Replacing traditional diodes in synchronous rectification can improve full-load efficiency by 2-3%, facilitating high power density design of power modules. Selection Summary: The MCU90N04Y-TP-VB sets a performance benchmark in the low-voltage high-power switching field with its 40V voltage rating, 1.6mΩ ultra-low on-resistance, and 120A high current capability. Its TO252 package balances heat dissipation and manufacturability, making it particularly suitable for power supply, motor, and battery management applications with strict requirements for efficiency, temperature rise, and reliability. It is a cost-effective power switch solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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