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MCU3D6N04YQ-TP-VB Product details

Product introduction:

MCU3D6N04YQ-TP-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching applications. Utilizing Trench technology, it combines ultra-low on-resistance with high switching reliability. The TO252 package provides excellent heat dissipation and power density. With a 40V voltage rating, 120A continuous current, and 1.6mΩ on-resistance, this powerful combination makes it an ideal choice for high-current power paths, motor drives, and battery protection, especially in industrial and automotive-grade systems demanding strict temperature rise and efficiency control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 3V 120A 3(mΩ) 1.6(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
VDS=40V: Covers 12V/24V and some 36V systems, provides sufficient voltage spike margin, adapts to wider operating conditions.
VGS=±20V: Compatible with 4.5V~12V logic level drives, can directly connect to MCU/PMIC or dedicated gate drivers, flexible design.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, ensures reliable turn-on under 4.5V drive.
RDS(on)=1.6mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction loss at 120A full load, significantly reduces device temperature rise.
RDS(on)=3mΩ @ VGS=4.5V: Maintains excellent conduction performance under low-voltage drive, simplifies drive circuit design.
ID=120A: Ample continuous current margin, can handle high-power load surges, suitable for high-rate discharge and heavy-load startup scenarios.
Package TO252: Complies with industry standard DPAK pad specifications, short heat dissipation path, suitable for surface mount, balancing high thermal dissipation and automated production.

Domain and module applications:


High-Power DC-DC Converters: In synchronous rectification or low-side switching, the 1.6mΩ ultra-low on-resistance significantly improves heavy-load efficiency, reducing heatsink requirements.
Motor Drive Modules: Supports high-current PWM control, low switching losses, smooth motor operation, and significantly improved controller temperature rise.
Battery Protection and BMS: Milliohm-level on-resistance reduces self-heating of the protection board, supports high-current charging/discharging, and extends system cycle life.
Automotive Power Systems: 40V voltage rating compatible with 12V/24V vehicle buses, combined with TO252 package to meet stringent thermal cycling and vibration environments.
Power Tools and Garden Machinery: 120A peak current capability easily handles stall and impact loads, improving overall equipment reliability.
Server Power Supplies and Rectifier Modules: Using this device in low-voltage high-current paths reduces conduction losses, aiding high power density design.
Load Switches and Power Path Management: Ultra-low conduction voltage drop reduces system voltage loss, suitable for high-current power switching and reverse polarity protection. Selection Summary: The MCU3D6N04YQ-TP-VB achieves an excellent balance between ultra-low on-resistance, high current carrying capability, and the thermal advantages of the TO252 package. It is a flagship general-purpose choice for 40V low-voltage high-power switching applications, particularly suitable for projects with strict requirements for efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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